Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE

Abstract

The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 • C. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

Effects of Al component content on optoelectronic properties of Al x Ga 1− x N

“…The ternary alloy Al x Ga 1−x N is well tailored for covering a large region of the UV spectrum by changing the Al component content. By adjusting the Al component content, the optical band gap of ternary alloy Al x Ga 1−x N can increase, [15,16] the optical absorption edge moves to the 280 nm blind ultraviolet band, and the sun-blind characteristic can completely be achieved. The responding wavelength of AlGaN is 239 nm-270 nm with the Al component content of 0.6-0.95, [17,18] while it is 280 nm for Al 0.5 Ga 0.5 N/Al 0.7 Ga 0.3 N, [19] and 280 nm-320 nm for PINI.…”