Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Sakic, A.; Qi, Lin; Scholtes, T.L.M.; Cingel, Johan van der; Nanver, L.K.

doi:10.1016/j.sse.2013.02.019

Cited by 4 publications

(1 citation statement)

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“…This is not surprising since the metal-Si reactions can create interface layers that have properties very different from the individual bulk materials. For example, Al is a p-dopant in Si and it is well known that at temperatures from 400 to 500°C, alloying of Al and Si can lead to p-doping of the Si [34]. Therefore, instead of having the highest current levels, corresponding to the lowest work function of 4.1 eV, the Al[500] Schottky diodes have the lowest current levels that are only about 2 decades higher than the implanted p ?…”

Section: Electrical Characterizationmentioning

confidence: 99%

Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

Shivakumar

Knežević

Nanver

2021

J Mater Sci: Mater Electron

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Metallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the p+-anode region of PureB diodes that have a metallurgic junction depth of zero on n-type Si. The metals were deposited by electron-beam-assisted physical vapor deposition (EBPVD) at room temperature and annealed at temperatures up to 500 °C. In all cases, the B-layer was an effective material barrier between the metal and Si, as verified by practically unchanged PureB diode I–V characteristics and microscopy inspections of the deposited layers. For this result, it was required that the Si surface be clean before B-deposition. Any Si surface contamination was otherwise seen to impede a complete B-coverage giving, sometimes Schottky-like, current increases. For Au, room-temperature interactions with the Si through such pinholes in the B-layer were excessive after the 500 °C anneal.

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Section: Electrical Characterizationmentioning

confidence: 99%