Aluminum Interconnect Cleaning and Drying

Maloney, David J.

doi:10.1002/9781118071748.ch9

Cited by 3 publications

(1 citation statement)

References 56 publications

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“…Acidic, semi-aqueous solution were also proposed by chemical suppliers, and a lot of efforts were done to develop cheaper and more environmentally friendly processes with diluted aqueous solutions [1]. The more promising one being diluted mixtures of sulfuric acid, hydrogen peroxide and few ppm of hydrofluoric acid (usually named DSP / DSP+ ) [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF

Broussous

2018

SSP

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For integrated circuit fabrication on 300 mm wafers, copper interconnections cleaning is generally done with single wafer tools. In this study, we focused on the cleaning of aluminum interconnections, on single wafer tool, with a cheap and easy to use chemistry. Aluminum compatibility with diluted HF solutions was first evaluated, then short and efficient cleaning processes were developped for two kind of applications : cleaning after aluminum line etching and cleaning after final dielectric etching over the aluminum pad. It was demonstrated that cleaning efficiency was poor for the shorter process time (20 s), but improved with process time increase, highlighting a lift-off mechanism for polymers removal. Best process was achieved with 40 s of HF 0.2%, that offers a good compromise between polymer removal and lateral recess of the aluminum.

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Section: Introductionmentioning

confidence: 99%

Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF

Broussous

2018

SSP

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Prevention of Al Interconnect Corrosion during Temperature-Humidity-Bias (THB) Stress

Keyes,

Perry,

O’Keeffe

et al. 2023

2023 IEEE International Integrated Reliability Workshop (IIRW)

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Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues

Cazes¹,

Pizzetti²,

Daviot³

et al. 2018

SSP

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A post-etch residue cleaning formulation, based on balancing the aggressiveness of hydrofluoric acid with its well-known residue removal properties is introduced. In a series of investigations originally motivated by the cleaning challenge provided by high-k dielectric-based residues, a formulation platform is developed that successfully cleans residues resulting from the plasma patterning of tantalum oxide and similar materials while maintaining metal and dielectric compatibility. It is further shown that the fundamental advantages of this solution can be extended to the cleaning of other, more traditional post-etch residues, with no sacrifice in compatibility, as demonstrated by measurements on blanket films and through SEM data.

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Aluminum Interconnect Cleaning and Drying

Cited by 3 publications

References 56 publications

Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF

Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF

Prevention of Al Interconnect Corrosion during Temperature-Humidity-Bias (THB) Stress

Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues

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