Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

Kar, Jyoti Prakash; Bose, G.

doi:10.5772/20840

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…Aluminum nitride (AlN) has emerged as an attractive candidate. 7 As a material widely used in the Micro-Electro-Mechanical Systems (MEMS), 8 AlN also shows the potential in areas such as optomechanics 9 and nonlinear optics. 10 It has a wide bandgap of 6.2 eV, 11 allowing operation from deep UV to mid-infrared (MIR).…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible photonic integrated circuits on thin-film ScAlN

Wang,

Dhyani,

Mohanraj

et al. 2024

APL Photonics

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Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with complementary metal–oxide semiconductor (CMOS) fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic study on the material quality of sputtered thin-film Sc0.1Al0.9N produced in a CMOS-compatible 200 mm line, including its crystallinity, roughness, and second-order optical nonlinearity, and developed an optimized fabrication process to yield 400 nm thick, fully etched waveguides. With surface polishing and annealing, we achieve micro-ring resonators with an intrinsic quality factor as high as 1.47 × 105, corresponding to a propagation loss of 2.4 dB/cm. These results serve as a critical step toward developing future large-scale, low-loss photonic integrated circuits based on ScAlN.

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