Aluminum Nitride Thin Film Based Reconfigurable Integrated Photonic Devices

Luo, Zhifang; Zhang, Aoxue; Huang, Weixiong; Shao, Shuai; Liu, Yushuai; Wu, Tao; Zou, Yi

doi:10.1109/jstqe.2023.3245290

Cited by 10 publications

(4 citation statements)

References 232 publications

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“…In recent years, aluminum nitride (AlN) single-crystal substrate with excellent properties, such as wide bandgap, high thermal conductivity, little lattice, and thermal mismatch with nitrides, has drawn much attention because of its wide applications in military and civilian fields [1][2][3][4][5]. Due to the applications of aluminum nitride single-crystal substrates in lasers, sensors, LEDs, and power electronic devices [6][7][8][9][10], 1 These two authors contributed equally to this work.…”

Section: Introductionmentioning

confidence: 99%

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Wang,

Zhu,

Zhao

et al. 2024

Semicond. Sci. Technol.

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In the physical vapor transport (PVT) growth of AlN, re-oxidation of aluminum nitride (AlN) source powder happening in the process of setting seed crystal into crucible seems to be unavoidable. This process introduces oxygen just before AlN growth and has a significant impact on the crystal quality. In this paper, a high and low-temperature alternative sintering method (HLAS) is proposed based on the idea of specific surface area control to reduce the re-oxidation of AlN source powder. This method introduces cyclic sintering between 1500°C and 1900°C to the conventional three-step treatment repeatedly, which utilizes possible phase-transition along with the processes of powder sintering back and forth to increase the particle size and decrease the specific surface area significantly. The SEM (Scanning electron microscope) and BET (Brunauer, Emmett, and Teller) results showed that the specific surface area of AlN powder treated with the HLAS method can be reduced to one-third of that with the conventional method. Thus, the SIMS (secondary ion mass spectrometry) confirmed the reduction of oxygen impurity in AlN single-crystals to a good level of 1.5×1017cm-3. It is clear that this HLAS process is an effective way of controlling the specific surface area of AlN source powder, which contributes to the suppression of oxygen influence on PVT-AlN growth.

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Section: Introductionmentioning

confidence: 99%

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Wang,

Zhu,

Zhao

et al. 2024

Semicond. Sci. Technol.

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“…Microelectromechanical Systems (MEMS) technology based solutions are getting more and more attention due to their high-performance, low-cost, and compact-size. [24][25][26][27][28] In recent years, piezoelectric surface acoustic wave (SAW) technology with a humidity sensing layer has gained widespread adoption, owing to its simplified fabrication process. [29][30][31] However, the ongoing miniaturization trend in wireless devices necessitates the development of smaller sensors.…”

Section: Introductionmentioning

confidence: 99%

Ultra-compact and high-performance suspended aluminum scandium nitride Lamb wave humidity sensor with a graphene oxide layer

Luo,

Li,

et al. 2024

Nanoscale

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“…Micro-electromechanical system technology (MEMS) is an important technology for microsystem integration and has been applied in various fields, such as high-precision sensing [1,2], automobile [3], electronic information [2,4], biomedical [5], aerospace [6], and so on. There are also some novel methods that have been invented to improve the sensing performance of gyros.…”

Section: Introductionmentioning

confidence: 99%

Adaptive Fuzzy Modal Matching of Capacitive Micromachined Gyro Electrostatic Controlling

Cheng,

Liu,

Guo

et al. 2023

Sensors

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A fuzzy PI controller was utilized to realize the modal matching between a driving and detecting model. A simulation model was built to study electrostatic decoupling controlling technology. The simulation results show that the modal matching can be gained by the fuzzy PI controller. The frequency difference between the driving mode and the detection mode is less than 1 Hz, and the offset of the input DC is smaller than 0.6 V. The optimal proportionality factor and integral coefficient are 1.5 and 20, respectively. The fuzzy PI controlling technology provides a good way for the parameter optimization to gain modal matching of micro gyro, via which the detecting accuracy and stability can be improved greatly.

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Aluminum Nitride Thin Film Based Reconfigurable Integrated Photonic Devices

Cited by 10 publications

References 232 publications

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Ultra-compact and high-performance suspended aluminum scandium nitride Lamb wave humidity sensor with a graphene oxide layer

Adaptive Fuzzy Modal Matching of Capacitive Micromachined Gyro Electrostatic Controlling

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