Aluminum Patterned Electroplating from AlCl3–[EMIm]Cl Ionic Liquid towards Microsystems Application

Abstract

Electroplating process is being used to deposit a relatively thick film of metallic materials for various microsystems applications, such as for the wafer-level bonding sealing frame and as a thermal actuator. Recently, the Al electroplating process from ionic liquid has been an attractive deposition method for anti-corrosion coatings. To extend the utilization of the film, in particular for microsystems application, a microstructure formation by patterned electroplating of Al from AlCl3–1-ethyl-3-methylimidazolium chloride ((EMIm)Cl) ionic liquid is investigated in this study. The influences of each deposition parameters to the electroplating process as well as the resulting surface morphology are evaluated. Electroplated Al deposits on both Au and Al seed layers are both studied. It is also found that a recurrent galvanic pulse plating process yields in a higher current efficiency. Finally, Al electroplating on a 2 µm-trenched 100 mm-wafer is also demonstrated.

Controllable Simultaneous Bifacial Cu‐Plating for High‐Efficiency Crystalline Silicon Solar Cells

“…The faradaic current efficiency ( CE F ) is defined as the ratio of the experimentally obtained amount of material deposited to its theoretical calculation according to Faraday's equation. It is mathematically expressed as , [ 41 ] where m represents the measured mass of elements deposited at the cathode, F is Faraday's constant (96 485 C mol −1 ), z is the valence of the ions, M is the molar mass of the substance, I is the applied current, and t expresses the deposition time. Accordingly, the CE F of our BF plating process corresponds to 89.4%.…”

Ultrahigh Energy Density and Long-Life Cyclic Stability of Surface-Treated Aluminum-Ion Supercapacitors

“…To use the electrodeposited aluminum as an anode material, it is desirable to have a large surface area and strong adhesion with the molybdenum substrate. Therefore, the correlation between the current density and deposition time was studied to determine the optimum conditions for aluminum electrodeposition. − Figure S2 shows the current density versus electroplating time curve and the corresponding SEM images of the deposited aluminum anode at several time intervals. Over the whole plating process, a current density of approximately −2.0 to −2.5 mA cm –2 was maintained.…”

Light-Induced Al Plating on Si for Fabrication of an Ag-Free All-Al Solar Cell

“…Al deposited under strict moisture and atmospheric exclusion are shown to have no Cl/O impurities by EDX. 24,25 The Cl and especially O impurities are likely the cause for the increase in film resistivity. Other impurities like nitrogen or sulfur present in the additives were not detected by EDX, which is in agreement with the literature.…”