Aluminum to Aluminum bonding at room temperature

Marion, F.; Brugiere, B. Goubault de; Bedoin, Alexis; Volpert, Marion; Berger, F.; Gueugnot, Alain; Anciant, R.; Ribot, H.

doi:10.1109/ectc.2013.6575565

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…This IMC is also known as the purple plague, well known in wire bonding technology. To avoid the formation of this IMC, the gold capping of the µ-tube has been recently replaced with an aluminum capping [8].…”

Section: µ-Insertion Reliabilitymentioning

confidence: 99%

Towards alternative technologies for fine pitch interconnects

Colonna

Segaud

Marion

et al. 2013

2013 IEEE 63rd Electronic Components and Technology Conference

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This study focuses on alternative technologies for fine pitch 3D interconnect. These technologies are: µ-inserts (insertion of a nickel cylinder in Aluminium pad), µ-tubes (insertion of a hard tube in Aluminium pad), Transient Liquid Phase (TLP) bonding (whole solder reacts to form intermetallic compound) and copper direct bonding. In the first part the process flow is described. Then electrical performances are presented, including a comparison of the Kelvin resistance for each technology. The next part presents reliability considerations, where the failure modes and the weaknesses of each interconnect technologies are described. The mechanical impact of insertion technologies is also studied. IntroductionOne of the most promising features of 3D Integration is the large communication bandwidth between chips. This can only be achieved through high density TSVs and interconnects. In face to back (F2B) stacking, the interconnect pitch is limited by TSV, but in face to face (F2F) stacking, there is no such limitation. Aggressive pitch is therefore one the top requirement for 3D interconnects. In this study, we will assess and compare different 3D interconnect technologies for sub-20µm pitch. These technologies are: µ-inserts (insertion of a nickel cylinder in Aluminium pad), µ-tubes (insertion of a hard tube in Aluminium pad), Transient Liquid Phase (TLP) bonding (whole solder reacts to form intermetallic compound) and Copper direct bonding. These interconnects have been developed for different application domains, with process temperatures ranging from room temperature to 400°C. In the first part the process flow and the assembly technology used for each type of interconnect are described. The second part focuses on electrical performances. The classical solder bonding technology using µ-bump is also presented as a reference. The Kelvin resistance is used to compare the electrical performance of each interconnect technology. In the last part, reliability considerations are presented. The failure modes and the weaknesses of each interconnect technologies are described. The mechanical impact of insertion technologies is also studied with finite element modeling.

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Section: µ-Insertion Reliabilitymentioning

confidence: 99%

Towards alternative technologies for fine pitch interconnects

Colonna

Segaud

Marion

et al. 2013

2013 IEEE 63rd Electronic Components and Technology Conference

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“…State‐of‐the‐art for display application is 15 μm . In the recent years, LETI has developed the so‐called microtube technology that combines low‐temperature operation (i.e., compatible with heterogeneous substrates) and pixel pitch of 10 μm and less. It has been already demonstrated that it is possible to hybridize heterogeneous devices at a pixel pitch of 10 μm using microtube technology .…”

Section: Approaches For the Fabrication Of Gan‐based Microdisplaysmentioning

confidence: 99%

GaN‐based emissive microdisplays: A very promising technology for compact, ultra‐high brightness display systems

2016

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“…Extra-high stress is not required to break down native oxides to form direct Au-Au bonding [8,9]. Therefore, Au, in combination with Cu interconnections, is the optimum metal for direct bonding, compared to other alternatives including Al, Ni, Ti, and Pd [10][11][12][13][14][15].…”

Section: Fabricationmentioning

confidence: 99%

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Wang

Smet

Kobayashi³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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This paper reports the first design and demonstration of a manufacturable 20 µm pitch Cu interconnection technology to ultra-thin glass interposers. Bonding is accomplished at temperatures below 200 o C without the need for solders. Manufacturability challenges such as substrate warpage, bump noncoplanarity and assembly throughput with low bonding times are addressed with this technology. The modeling and experimental results indicate that the ultra-fine pitch Cu interconnection offsets more than 3 µm non-coplanarity. Bonding interfaces were characterized to show that metallurgical bonding microstructure is formed even with a bonding time of 5 seconds, with superior electrical properties. A mechanism for low-temperature metallurgical bonding is proposed based on the characterization results.

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Aluminum to Aluminum bonding at room temperature

Cited by 7 publications

References 7 publications

Towards alternative technologies for fine pitch interconnects

Towards alternative technologies for fine pitch interconnects

GaN‐based emissive microdisplays: A very promising technology for compact, ultra‐high brightness display systems

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

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Aluminum to Aluminum bonding at room temperature

Cited by 7 publications

References 7 publications

Towards alternative technologies for fine pitch interconnects

Towards alternative technologies for fine pitch interconnects

GaN‐based emissive microdisplays: A very promising technology for compact, ultra‐high brightness display systems

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 &#x03BC;m pitch

Contact Info

Product

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Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch