2010
DOI: 10.1016/j.actamat.2010.04.016
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Aluminum Σ3 grain boundary sliding enhanced by vacancy diffusion

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Cited by 24 publications
(7 citation statements)
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“…[31] Doping GB with vacancies can increase the mobility of the atoms at the GB and induce GB premelting, thus lowering GBS threshold stress. [47] Si impurities seem to enhance GBS by a similar process.…”
Section: A Gb Mobility and Slidingmentioning
confidence: 84%
“…[31] Doping GB with vacancies can increase the mobility of the atoms at the GB and induce GB premelting, thus lowering GBS threshold stress. [47] Si impurities seem to enhance GBS by a similar process.…”
Section: A Gb Mobility and Slidingmentioning
confidence: 84%
“…These simulations also revealed a lack of the sudden atomic rearrangements at the boundary, a phenomenon found via the density functional theory simulations by Molteni et al [ 37 ] MD simulations by Du et al of high angle Al grain boundaries under simple shear at 750 K calculated critical stresses to induce grain boundary sliding to be as low as 20 MPa and that the presence of vacancies decreased this critical stress. [ 38 ] While molecular dynamics simulations may be useful in understanding these experimental results, some do not account for effects of temperature and most are limited by their system size, computational cost, and unrealistic strain rates such that they may not be representative of the actual material behavior.…”
Section: Discussionmentioning
confidence: 99%
“…This conclusion was supported by a large number of studies on thermally activated GB sliding that showed that faster GB sliding occurred due to higher GB self-diffusion rates, which correlated with GB energy and GB volume. Du et al [69] used the MD simulation method at a temperature of 750 K to investigate the effect of vacancies that near the boundary area on the sliding of Al bicrystals. They found that without vacancies, low energy R3 GB exhibited much less sliding than other high energy GBs.…”
Section: Grain Boundary Slidingmentioning
confidence: 99%