Ambipolar charge transport in organic field-effect transistors

Smits, Edsger C. P.; Anthopoulos, Thomas D.; Setayesh, Sepas; Veenendaal, E. van; Coehoorn, R.; Blom, Paul W. M.; Boer, Bart de; Leeuw, Dago M. de

doi:10.1103/physrevb.73.205316

Cited by 175 publications

(136 citation statements)

References 35 publications

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“…1,5,9,11,12 Only recently single component air-stable ambipolar OFETs and logic circuits have been demonstrated. 4,13 In these studies the near infrared absorbing dithiolene derivative bis ͓4-dimethylaminodithiobenzyl͔-nickel was employed as the semiconductor layer. In spite of the very promising preliminary results, however, new ambipolar molecules with comparable environmental stability have yet to be demonstrated.…”

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confidence: 99%

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Air-stable ambipolar organic transistors

Anthopoulos

Anyfantis

Papavassiliou

et al. 2007

Applied Physics Letters

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203

174

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The authors report on ambipolar organic transistors based on the soluble dithiolene derivative ͑diphenylethylenedithiolato͒͑1,3-dithiol-2-thione-4,5-dithiolato͒nickel ͓Ni͑dpedt͒͑dmit͔͒. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10 −4 cm 2 / V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni͑dpedt͒͑dmit͒ as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/n-channel molecules.

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confidence: 99%

“…Although the stability of the p-channel does not come as a surprise the n-channel stability does as it has been reported only for a handful of organic molecules. 4,13,[24][25][26][27] In an effort to elucidate the origin of the n-channel stability we have studied a series of organic molecules with different electrochemical characteristics ͑Fig. 4͒.…”

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confidence: 99%

Air-stable ambipolar organic transistors

Anthopoulos

Anyfantis

Papavassiliou

et al. 2007

Applied Physics Letters

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203

174

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“…Transport Figure 2 shows the in situ output characteristics of the PDPPBBT OFET prepared for IR microscopy. We observe typical ambipolar transport behavior 26,27 : diodelike evolution of the drain current at low to moderate gate voltages, and strong electron or hole saturation currents at higher gate bias. Charge carrier mobilities were calculated in the saturation regime during unipolar operation via the standard equation:…”

Section: Resultsmentioning

confidence: 90%

Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

et al. 2014

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A resurgence in the use of the donor-acceptor (DA) approach in synthesizing conjugated polymers has resulted in a family of high-mobility ambipolar systems with exceptionally narrow energy bandgaps below 1 eV. The ability to transport both electrons and holes is critical for device applications such as organic light-emitting diodes (OLEDs) and transistors (OLETs). Infrared spectroscopy offers direct access to the low-energy excitations associated with injected charge carriers. Here we use a diffraction-limited IR microscope to probe the spectroscopic signatures of electron and hole injection in the conduction channel of an organic field-effect transistor (OFET) based on an ambipolar DA polymer polydiketopyrrolopyrrole-benzobisthiadiazole (PDPPBBT). We observe distinct polaronic absorptions for both electrons and holes, and spatially map the carrier distribution from the source to drain electrodes for both unipolar and ambipolar biasing regimes. For ambipolar device configurations, we observe the spatial evolution of hole-induced to electron-induced polaron absorptions throughout the transport path. Our work provides a platform for combined transport and infrared studies of organic semiconductors on micron length scales relevant to functional devices.

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“…Electron transport in conjugated polymers is extremely sensitive to impurities. Extrinsic effects, such as the presence of traps specifically for electrons, or the instability of radical-anions upon the presence of water, oxygen and hydroxyl groups, are known to be responsible for the low mobility of electrons in conjugated polymers (35)(36)(37). Moreover, there is no observable electron transport in PTAA according to TOF results published elsewhere (25).…”

Section: Resultsmentioning

confidence: 99%

Achieving a Stable Time Response in Polymeric Radiation Sensors under Charge Injection by X-rays

Intaniwet

Mills

Sellin

et al. 2010

ACS Appl. Mater. Interfaces

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Existing inorganic materials for radiation sensors suffer from several drawbacks, including their inability to cover large curved areas, lack of tissue-equivalence, toxicity, and mechanical inflexibility. As an alternative to inorganics, poly(triarylamine) (PTAA) diodes have been evaluated for their suitability for detecting radiation via the direct creation of X-ray induced photocurrents. A single layer of PTAA is deposited on indium tin oxide (ITO) substrates, with top electrodes selected from Al, Au, Ni and Pd. The choice of metal electrode has a pronounced effect on the performance of the device; there is a direct correlation between the diode rectification factor and the metal-PTAA barrier height. A diode with an Al contact shows the highest quality of rectifying junction, and it produces a high X-ray photocurrent (several nA) that is stable during continuous exposure to 50 kV Mo Kα X-radiation over long timescales, combined with a high signal-to-noise ratio with fast response times of less than 0.25 s. Diodes with a low band-gap, 'Ohmic' contact, such as ITO/PTAA/Au, show a slow transient response. This result can be explained by the build-up of space charge at the metal-PTAA interface, caused by a high level of charge injection due to X-rayinduced carriers. These data provide new insights into the optimum selection of metals for Schottky contacts on organic materials, with wider applications in light sensors and photovoltaic devices.

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Ambipolar charge transport in organic field-effect transistors

Cited by 175 publications

References 35 publications

Air-stable ambipolar organic transistors

Air-stable ambipolar organic transistors

Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

Achieving a Stable Time Response in Polymeric Radiation Sensors under Charge Injection by X-rays

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