Ambipolar Field‐Effect Transistor Based on CH₃NH₃PbI₃ Microwires

Abstract

Organic-inorganic hybrid perovskites are promising semiconductors for high-performance field-effect transistors because of their excellent charge carrier transport, but hybrid perovskites used in field-effect transistors are not diverse enough and the field-effect performances are always not satisfactory at room temperature and in the dark and air. Herein, we prepared CH 3 NH 3 PbI 3 microwires through a transformation from CH 3 NH 3 PbI 3 bulk single crystals and fabricated ambipolar fieldeffect transistors based on them. At room temperature and in the dark and air, the field-effect mobility can reach to 1.8 × 10 À 3 cm 2 V À 1 s À 1 , which is two orders of magnitude higher than that of CH 3 NH 3 PbI 3 polycrystalline film based field-effect transistors under the same condition, indicating that CH 3 NH 3 PbI 3 microwires have potential for use in ambipolar transistors.

Organic–inorganic hybrid perovskite materials and their application in transistors

“…However, the mobility and on/off ratio were still far from meeting the practical requirement. 124 Vertical FETs. Owing to the short channel length and facile layer-by-layer solution fabrication method, the vertical field effect transistor has received attention over the years.…”