Ambipolar organic thin film transistors based on a soluble pentacene derivative

Abstract

We report on ambipolar thin film transistors based on solution-deposited films of a pentacene derivative, 2,3-dicyano-6,13-bis-(triisopropylsilylethynyl)pentacene (2,3-CN2-TIPS-Pn). The ambipolar charge transport observed in this material is well balanced; the values of the hole and electron mobility are both about 2 × 10−3 cm2/Vs. The position of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of 2,3-CN2-TIPS-Pn with respect to the work function of the Au charge-injecting electrode and the arrangement of the molecules in the film, as deduced by grazing incidence x-ray diffraction analysis, contributes to explain the charge transport properties of 2,3-CN2-TIPS-Pn films.

Anthracene−Pentacene Dyads: Synthesis and OFET Characterization

“…2 • 10 À 3 cm 2 V À 1 s À 1 ). [30] The hole mobilities for 1 a,b,d,e on SiO 2 , however, are far below that of, for example, 6,13-bis(triisopropylsilyethynyl)pentacene which is often considered as state-ofthe-art and features hole mobilities of > 1 cm 2 V À 1 s À 1 (solution processed OFETs). [31]…”

“…Ignoring differences in device formation and structure, the ambipolar behavior of 1 b on AlO x C 14 PA compares well to other pentacene derivatives, such as 2,3‐dicyano‐6,13‐bis‐(triisopropylsilylethynyl)pentacene (hole and electron mobility ca. 2 ⋅ 10 −3 cm 2 V −1 s −1 ) . The hole mobilities for 1 a , b , d , e on SiO 2 , however, are far below that of, for example, 6,13‐bis(triisopropylsilyethynyl)pentacene which is often considered as state‐of‐the‐art and features hole mobilities of >1 cm 2 V −1 s −1 (solution processed OFETs) …”