Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics

Kang, Sung Bum; Park, Won Jin; Jeong, Myeong Hoon; Kang, So‐Huei; Yang, Changduk

doi:10.1002/adfm.202004943

Cited by 13 publications

(9 citation statements)

References 94 publications

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“…[1] In the past few years, through the improvement of device structure and optimization of process conditions, the experimental efficiency of PEDOT:PSS/Si solar cells has rapidly increased from 5.1% to 18.4%. [2][3][4][5] However, the PCE of PEDOT:PSS/ planar Si is not ideal due to the huge reflection of the planar Si surface causing severe light loss. So far, different nanostructured Si, such as nanowires (NWs), [6][7][8] nanopyramids (NPs), [9,10] nanocones (NCs), [11] and hierarchical structures, [12,13] have been reported to enhance the harvesting of sunlight.…”

Section: Introductionmentioning

confidence: 99%

Achieving a Record Open‐Circuit Voltage for Organic/Si Hybrid Solar Cells by Improving Junction Quality

Hou

Chen

et al. 2021

Solar RRL

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Nanostructured Si has attracted widespread attention due to its strong light‐harvesting ability, which is beneficial to improve the performance of solar cells. However, the poor contact of the organic/nanostructured Si interface and the large number of recombination centers on the Si surface result in an unsatisfactory open circuit voltage (VOC) and fill factor (FF) of the device. Herein, a simple and versatile method, Si nanowires modified with tetramethylammonium hydroxide (TMAH) and poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) doped with 3‐glycidoxypropyltrimethoxydsilane (GOPS), is proposed to improve the contact quality of the heterojunction. TMAH treatment adjusts the morphology of the Si nanowires and makes the surface smoother, effectively inhibiting surface recombination at the heterojunction interface. Moreover, the GOPS‐doped PEDOT:PSS solution can achieve conformal contact on the surface of nanostructured Si, which is more conducive to the extraction and separation of charges. As a result, a record VOC of 660 mV is obtained for PEDOT:PSS/nanostructured Si hybrid solar cells. In addition, the short circuit current density (JSC) is as high as 33.00 mA cm−2, and the FF is as high as 69.03%; therefore, the efficiency of the device reaches 15.01%. The results provide a simple and feasible strategy to improve the junction quality and performance of organic/Si solar cells.

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Section: Introductionmentioning

confidence: 99%

Achieving a Record Open‐Circuit Voltage for Organic/Si Hybrid Solar Cells by Improving Junction Quality

Hou

Chen

et al. 2021

Solar RRL

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“…For the PEDOT:PSS/Si HHSCs with the structure of "Front PEDOT:PSS," in which the PEDOT:PSS layer acts as the optical window, efficiencies of 13%-17% [13][14][15][16][17] were achieved with spin coated PEDOT:PSS HTL and vacuum deposited electron transport layer (ETL). Very recently, efficiencies above 18% 18,19 were reported on HHSCs in which both HTL and ETL were fabricated using solution technology, which makes spraying or printing high efficiency c-Si heterojunction solar cells possible in the future. Meanwhile, devices with the "Back PEDOT:PSS" structure, where doped Si layer served as the front side ETL and PEDOT:PSS HTL was spin coated at backside of the Si substrates to prevent the parasitic absorption of PEDOT:PSS, have also been investigated and the efficiencies have recently come up to 18.8% 20 on n-Si substrates and 20.6% 21 on p-Si substrates.…”

Section: Introductionmentioning

confidence: 99%

“…The PEDOT:PSS/n‐type c‐Si heterojunction contact with an inversion layer contributes to the excellent charge separation and transport characteristics and demonstrating the potential for high power conversion efficiency (PCE). Thereby, PEDOT:PSS/Si hybrid heterojunction solar cells (HHSCs) in which n type c‐Si wafer serves as absorber and PEDOT:PSS functions as HTL have drawn significant attention due to promising PCE as well as simple and low temperature solution processing 6–28 …”

Section: Introductionmentioning

confidence: 99%

Organic/silicon nanowires hybrid solar cells using isobutyltriethoxysilane incorporated poly(3,4‐ethylenedioxythiophene):poly (styrenesulfonate) as hole transport layer

Shen

Sun

Zhou

et al. 2022

Progress in Photovoltaics

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Hybrid heterojunction solar cells (HHSCs) using c‐Si nanowires (SiNWs) as the absorber and poly(3,4‐ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) as the hole selective transport layer (HTL) have been drawing more and more attention due to low cost process as well as high power conversion efficiencies (PCE). However, strong hygroscopicity of the PEDOT:PSS film causes serious degradation of the HHSCs. To improve the stability of the HHSCs, a kind of silane impregnating agent, isobutyltriethoxysilane (IBTEO), was selected as the additive to be added in the PEDOT:PSS solution. The hydrophobicity of the PEDOT:PSS film is much improved by formation of the hydrophobic silicone. The contact area between PEDOT:PSS and SiNWs is dramatically enlarged and more stable Si‐O‐Si bonds were formed at the PEDOT:PSS/SiNWs interface. As a result, the performance and stability of the HHSCs have been significantly improved. A PCE of 18.2% and a FF of 80.5% were obtained for a champion full solution processed PEDOT:PSS/SiNWs HHSC with 1 vol% IBTEO addition. The PCE remains 78% of the initial value after exposed 300 h in the air for the sample with IBTEO added in the PEDOT:PSS solution, while only 7% left for the control device without IBTEO addition.

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“…Heterostructures including nanocomposites or heterojunctions have also been highly attractive as building blocks for optoelectronic devices [1][2][3][4][5]. When two different semiconductors meet each other, band lineups occur at the interface in suitable combinations.…”

Section: Introductionmentioning

confidence: 99%

Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer

Kang

Sharma

et al. 2022

Energies

Self Cite

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The growth of high-quality compound semiconductor materials on silicon substrates has long been studied to overcome the high price of compound semiconductor substrates. In this study, we successfully fabricated nanowire solar cells by utilizing high-quality hetero p-n junctions formed by growing n-type III-V nanowires on p-silicon substrates. The n-InAs0.75P0.25 nanowire array was grown by the Volmer–Weber mechanism, a three-dimensional island growth mode arising from a lattice mismatch between III-V and silicon. For the surface passivation of n-InAs0.75P0.25 core nanowires, a wide bandgap InP shell was formed. The nanowire solar cell was fabricated by benzocyclobutene (BCB) filling, exposure of nanowire tips by reactive-ion etching, electron-beam deposition of ITO window layer, and finally metal grid electrode process. In particular, the ITO window layer plays a key role in reducing light reflection as well as electrically connecting nanowires that are electrically separated from each other. The deposition angle was adjusted for conformal coating of ITO on the nanowire surface, and as a result, the lowest light reflectance and excellent electrical connectivity between the nanowires were confirmed at an oblique deposition angle of 40°. The solar cell based on the heterojunction between the n-InAs0.75P0.25/InP core-shell nanowire and p-Si exhibited a very high photoelectric conversion efficiency of 9.19% with a current density of 27.10 mA/cm2, an open-circuit voltage of 484 mV, and a fill factor of 70.1%.

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Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics

Cited by 13 publications

References 94 publications

Achieving a Record Open‐Circuit Voltage for Organic/Si Hybrid Solar Cells by Improving Junction Quality

Achieving a Record Open‐Circuit Voltage for Organic/Si Hybrid Solar Cells by Improving Junction Quality

Organic/silicon nanowires hybrid solar cells using isobutyltriethoxysilane incorporated poly(3,4‐ethylenedioxythiophene):poly (styrenesulfonate) as hole transport layer

Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer

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