Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters

Abstract

and inverters exhibit the best performance among perovskite PFETs. The present work demonstrates that triple cation perovskite can provide the ambipolar PFETs and complementary metal-oxide-semiconductor (CMOS)-like circuits for next generation, large-area microelectronics with low manufacturing cost.The PFETs with bottom contacts and a top gate were constructed by spin coating the triple cation precursor solution in anhydrous dimethylformamide:dimethylsulfoxide (DMF:DMSO) 4:1 (v:v) on the substrates (Figure 1a). The perovskite solution was deposited in two steps at 1000 and 6000 rpm for 10 and 30 s, respectively. Solvent treatment was conducted during the second step, where 100 µL chlorobenzene was poured on the spinning substrate followed by annealing at 100 °C for 1 h. Triple cation PFETs with various Cs amounts were fabricated, and their respective transfer and output characteristics are compared in Figures S1-S6 (Supporting Information). Figures S1-S6 (Supporting Information) illustrate transfer curves of the ambipolar triple cation PFETs, and I DS 1/2 versus V DS plot as a function of Cs cation. As Cs increased from 0% to 10%, the mobility increased monotonically from 1.95 × 10 −2 to 1.25 cm 2 V −1 s −1 for holes and from 4.81 × 10 −2 to 4.11 × 10 −2 cm 2 V −1 s −1 for electrons (Table S1, Supporting Information). However, no significant change in the charge-carrier mobilities was observed when Cs is higher than 15%. Figure 1b,c demonstrates the transfer characteristics for the p-and n-channel PFETs (Cs = 15%), respectively, with poly(methyl methacrylate) (PMMA) as a gate dielectric, in which ambipolar charge-transport characteristics were observed. Figure 1d,e represents the typical output characteristics with good current modulation. PMMA was selected since it can be processed at low temperature, soluble in a solvent orthogonal to triple cation, and contains negligible OH groups that could trap electrons. When V DS is low, the potential for the hole and electron injection cannot exceed the threshold voltage simultaneously. As a result, only one carrier can be accumulated, and the devices work in the unipolar model. Under these conditions, the transistors exhibit a very high I ON /I OFF ratio, typically higher than 10 4 at a high gate voltage (V GS = 130 V). The charge-carrier mobilities were determined using the drain current (I DS ) in the saturation region; Table S1 (Supporting Information) summarizes the maximum and average p-and n-channel mobilities. The maximum µ h and µ e mobilities are calculated to be 2.1 and 2.5 cm 2 V −1 s −1 , respectively. To the best of our knowledge, this is the highest carrier mobility for the perovskite PFETs. [17] The incorporation of Cs cation (Cs = 0%-30%) has notable effect on the performance of ambipolar triple cation PFETs.We have exposed freshly prepared PFETs to ambient air and monitored the p-and n-channel performance as a function of Organolead halide perovskites (ABX 3 where A is organic or inorganic cation, B is metal cation, and X is halogen anion) have signi...

Low‐Dimensional Perovskites: From Synthesis to Stability in Perovskite Solar Cells

“…Recently, organic-inorganic metal halide perovskites have attracted much interest from the scientific community for various applications, including solar cells, [1][2][3][4][5][6][7][8][9][10][11][12] lasers, [13][14][15] light emitting diodes (LED), [16][17][18] water splitting, [19,20] photodetectors, [21][22][23][24][25] field-effect transistors, [26][27][28][29][30] nonvolatile memory, [31,32] capacitors, [33] battery, [34,35] optical amplifiers, [36] lasing, [37][38][39] and laser cooling. [40] They are now considered the most exceptional materials due to their high efficiency and ease in fabrication, and the materials used to form perovskite are extensively available and inexpensive.…”

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

“…They applied mono-or bilayer graphene stripes as the source-drain contact electrodes for the perovskite microplate FET. [114] Yusoff et al [115] improved the thermal stability of perovskites by integrating inorganic Cs and organic cations in the film, thereby suppressing the photoinactive hexagonal δ phase for the FET. Additionally, graphene improves device stability during fabrication, allowing the encapsulation by boron nitride.…”

“…The work function of graphene can be easily tuned by the back-gate voltage, which makes it possible to tune the barrier height between graphene and MAPbI 3 . [115] Huo et al [116] processed ultrathin CsPbBr 3 single crystals using a dry-processed transfer technique to avoid chemical contaminant. Strong hysteresis is observed for all transfer curves at 77K and higher temperature (Figure 6c).…”

“…Matsushima et al [38] fabricated a FET device using PEASnI 4 films. [114] Yusoff et al [115] enhanced the thermal stability of perovskites by partial substituting organic cations with inorganic Cs and halide ion mixing (e.g., Cs x (MA 0.17 FA 0.83 ) 1− This is one of the reasons why hysteresis is diminished in the source-drain current/gate voltage-current curve.…”

“…[115] Stability of Hybrid Perovskite Materials Based FET Can Be Improved by Engineering Electrode-Channel Interface: Metal electrode (e.g., Cu, Ag, Au, Co, Ni, Pd, Cr, and Al) would interact with perovskite or decomposition products of hybrid perovskite (e.g., MAI, HI, CH 3 I, and I 2 ) [154][155][156][157][158] For instance, Au would corrode by interacting with reactive polyiodide, formed from perovskite decomposition. The electron and hole mobility of 2.5 and 2.1 cm 2 V −1 s −1 was achieved at room temperature, respectively.…”