Amine‐Reactive Monolayers on Scribed Silicon with Controlled Levels of Functionality: Reaction of a Bare Silicon Surface with Mono‐ and Diepoxides

Chemomechanical Functionalization and Patterning of Silicon

“…12 Three possible mechanisms for the reaction between epoxides and Si scr were proposed. 10 Ab initio calculations were most consistent with a silicon surface radical attacking the oxygen of an epoxide ring to form a strong siliconoxygen bond, followed by ring opening and then by Si-C bond formation between a carbon-centered radical on the alkyl chain and a surface silicon radical (see Figure 2).…”

“…Monolayers on scribed silicon (Si scr ) have been produced by scribing in the presence of 1-alkenes, 6,7,9 1-alkynes, 6,9 aldehydes, 12 alcohols, 7 alkyl halides, 8,9,15 epoxides, 10 and acid chlorides. 13 Si scr is believed to be similar to Si(100)-2 × 1 and Si(111)-7 × 7, the two most important reconstructions of silicon, which are also known to react with all of these species, [36][37][38][39][40][41][42][43][44][45][46] except the epoxides and acid chlorides.…”

“…XPS provides direct evidence for monolayer formation on Si scr . [6][7][8]10,12 Figure 4 shows XPS survey spectra with Si 2p narrow scans (insets) of (a) a control experiment in which clean, dry silicon was scribed in the air, (b) another control experiment in which silicon was first scribed in the air and then immediately wet with 1-dodecene, and (c) silicon that was wet with 1-dodecene and then scribed. The control surfaces show small C 1s signals, strong O 1s signals, and chemically shifted Si 2p peaks (∼103 eV), which indicate silicon oxide.…”

“…[1][2][3][4][5] Chemomechanical modification, or scribing, of silicon, which is the subject of this Account, is arguably the least expensive and most rapid approach for simultaneously functionalizing and patterning silicon. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] This method consists of wetting a silicon surface with a reactive compound and then scribing the surface. Scribing breaks through silicon's passivation layer (oxide or hydrogen) to expose a highly reactive surface that appears to react immediately with the reagent with which it is in contact (Figure 1).…”

1,2-Epoxyalkane: Another Precursor for Fabricating Alkoxy Self-Assembled Monolayers on Hydrogen-Terminated Si(111)

“…34,35 On the basis of the chemical reactivity of these epoxides, grafting of the epoxide-containing compounds on scribed silicon has been reported, by which SAM was obtained by opening the epoxide moieties. 37 We previously reported a brief communication about the usage of 1,2-epoxydodecane (EC 12 ) as a precursor for forming EC 12 H−Si substrates was carried out through UV exposure. After grafting EC 12 , the water contact angle (WCA) values exceeded 100°, indicating that the developed SAM was CH 3terminated.…”