Amino-propyl-triethoxy-silane on aluminum fiducial grids for spatial-phase-locked electron-beam lithography

Samantaray, Chandan B.; Hastings, J. T.

doi:10.1116/1.3259960

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…1 These low-cost, low-energy SEMs are simpler than conventional SEMs; adapting them as SEBL tools could result in a significant reduction in tool cost. The recent introduction of microcolumnbased scanning electron microscopes (SEMs) has reawakened interest in SEBL at incident energies of 2 keV and below.…”

Section: Introductionmentioning

confidence: 99%

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Secondary-electron signal level measurements of self-assembled monolayers for spatial-phase-locked electron-beam lithography

Cheong

Lobez

Moon

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inSelective atomic layer deposition with electron-beam patterned self-assembled monolayers J. Vac. Sci. Technol. A 30, 01A128 (2012); 10.1116/1.3664282Self-assembled monolayer fiducial grids for spatial-phase-locked electron-beam lithography Electron-beam lithography with aromatic self-assembled monolayers on silicon surfacesThe secondary-electron signal levels of eight thiophenol-based self-assembled monolayers (SAMs) on gold (Au) are measured and compared against the signal level from bare gold between energies 1 and 2 keV. To enable accurate comparison, scanning electron micrographs of SAMs are taken with a Faraday cup and a reference sample. Most SAMs-on-gold produce a lower signal level than that from bare gold, with the exception of 3-methylthiophenol. Highest occupied molecular orbital and lowest unoccupied molecular orbital levels of the thiophenol derivatives are calculated and compared against the signal levels. Signal levels from bis[3-(triethoxysilyl)propyl]tetrasulfide, (4-chlorophenyl)-triethoxysilane, and amino-propyl-triethoxy-silane on titanium (Ti) and aluminum (Al) are also measured. All three SAMs on aluminum have lower signal levels than bare Al but this effect is reversed for the case of Ti, where SAMs deposited on Ti result in a higher signal level. A hybrid Ti/ Al fiducial grid is fabricated and the point-spread function at 2 keV in the underlying resist is investigated

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Section: Introductionmentioning

confidence: 99%

“…1 It has been known since the 1990 s that patterned SAMs on a gold (Au) surface form images in SEMs. 1 It has been known since the 1990 s that patterned SAMs on a gold (Au) surface form images in SEMs.…”

Section: Introductionmentioning

confidence: 99%

Secondary-electron signal level measurements of self-assembled monolayers for spatial-phase-locked electron-beam lithography

Cheong

Lobez

Moon

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Scanning Probe Microscopy for Nanolithography

Samantaray

2015

Surface Science Tools for Nanomaterials Characterization

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Deep UV patterning of 3-amino-propyl-triethoxy-silane self-assembled molecular layers on alumina

Samantaray

Hastings

2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Organosilane molecular layers are widely used to modify surface functionality and for the immobilization and assembly of more complex nanostructures. Unlike alkanethiol layers, simple organosilanes have not been directly photopatterened with easily accessible optical wavelengths. In particular, 3-amino-propyl-triethoxy-silane (APTES) is commonly used for such purposes, and a direct means of patterning molecular layers of APTES would be of interest for a variety of applications. However, previous efforts to photopattern aminosilanes have been limited to vacuum ultraviolet (VUV) radiation at 172 nm. Here APTES layers were photopatterned on partially oxidized aluminum using 266 nm laser irradiation. APTES layers were grown on both oxidized Al and Si surfaces for patterning and reflection absorption infrared spectroscopy purposes. APTES on aluminum oxide, in contrast to silicon, retains ethoxy groups. These groups are eliminated by 266 nm laser irradiation providing insight into the photopatterning mechanism. Unlike 172 nm irradiation, the 266 nm wavelength retains the APTES backbone. Microscale patterning of APTES has been performed and the exposed samples were processed in a second organosilane, n-butyltrichlorosilane (BTS) or n-octadecyltrimethoxysilane (ODS), that enhances secondary-electron contrast compared to a patterned APTES sample. The authors found that BTS/APTES patterns exhibited contrast reversal compared to ODS/APTES structures. Direct patterning of organosilane films using deep-UV (rather than VUV or e-beam) exposure allows the use of coherent and continuous-wave sources and also prevents exposure of underlying resist layers when using the organosilane pattern as an in situ metrology standard for electron-beam lithography.

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Amino-propyl-triethoxy-silane on aluminum fiducial grids for spatial-phase-locked electron-beam lithography

Cited by 4 publications

References 24 publications

Secondary-electron signal level measurements of self-assembled monolayers for spatial-phase-locked electron-beam lithography

Secondary-electron signal level measurements of self-assembled monolayers for spatial-phase-locked electron-beam lithography

Scanning Probe Microscopy for Nanolithography

Deep UV patterning of 3-amino-propyl-triethoxy-silane self-assembled molecular layers on alumina

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