2022
DOI: 10.1016/j.matpr.2022.02.369
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Ammonia sensing by silicon nanowires (SINWs) obtained through metal assisted electrochemical etching

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Cited by 3 publications
(4 citation statements)
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“…No diffraction peaks of PANI can be identified, which can be associated with the formation of a thin and amorphous layer of PANI on the silicon [31,45] . All samples display a distinct peak at 69°, which corresponds to the <400> crystal orientation as the first reflection from <100> silicon (Figure 3b), indicating that MACE and subsequent polymerization of aniline do not affect the crystallinity of the silicon [16,46] …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…No diffraction peaks of PANI can be identified, which can be associated with the formation of a thin and amorphous layer of PANI on the silicon [31,45] . All samples display a distinct peak at 69°, which corresponds to the <400> crystal orientation as the first reflection from <100> silicon (Figure 3b), indicating that MACE and subsequent polymerization of aniline do not affect the crystallinity of the silicon [16,46] …”
Section: Resultsmentioning
confidence: 99%
“…[31,45] All samples display a distinct peak at 69°, which corresponds to the < 400 > crystal orientation as the first reflection from < 100 > silicon (Figure 3b), indicating that MACE and subsequent polymerization of aniline do not affect the crystallinity of the silicon. [16,46] The Si 2p and N 1s high-resolution X-ray photoelectron spectroscopy (XPS) spectra of SiNW-PANI are displayed in Figure 3c-3d. The Si 2p spectra can be deconvoluted into four peaks.…”
Section: Resultsmentioning
confidence: 99%
“…However, it has been reported recently, device based on MOS capacitors possess low capacitance value in the accumulation region, this resulting in higher energy consumption and low speed for the devices based on MOS capacitors [4], [5]. Therefore, silicon nanowires (SiNWs) have received considerable attention from several research communities due to their electrical, optical and mechanical properties [6], [7].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, different SiNWs fabrication procedures have been developed such as chemical vapor deposition (CVD), vapour liquid solid (VLS), laser ablation, metal assisted chemical etching (MACE) methods [7]. Among them, MACE is one of the easiest methods to fabricate SiNWs because one can be able to control surface morphology, orientation and length of nanowires and many more.…”
Section: Introductionmentioning
confidence: 99%