Ammonia thermally treated gallium nitride deposited on gold-nucleation sites

Valenzuela-Hernandez, G.; Berman-Mendoza, D.; Rangel, R.; Vazquez, J.; Bohorquez, C.; Contreras, O.; Carrillo, R.; García-Gutiérrez, Rafael; Ramos-Carrazco, A.

doi:10.1007/s11696-022-02520-6

Cited by 2 publications

(8 citation statements)

References 48 publications

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“…The analysis and the size distribution of the AuNPs formed by this method were previously reported. 29 An oriented crystallization was noticed along the area surrounding the NPs, leading to the growth of small crystals on the nucleation centers, as shown in Figure 2b. In a later stage of the reaction, the ripening of GaN promoted a synergistic effect with the AuNPs in the growth process, as shown in Figure 2c,d.…”

Section: ■ Results and Discussionmentioning

confidence: 91%

“…As observed in Figure a, before the GaN synthesis, the heat treatment of a Au thin film leads to the formation of nucleation centers, covering a large portion of the surface area of the Si(111) substrate. The analysis and the size distribution of the AuNPs formed by this method were previously reported …”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, the use of metallic nanoparticles (i.e., gold, silver, and alloys) as nucleation centers in the production of GaN to overcome these challenges was already reported, − while Valenzuela-Hernandez et al obtained wurtzite GaN samples with the hexagonal structure on Au/Si(100).…”

Section: Introductionmentioning

confidence: 99%

“…24 However, the GaN films synthesized from these methods exhibit high spontaneous recombination rates that reduce the performance of current generator devices due to nonsuitability. 25 On the other hand, the use of metallic nanoparticles (i.e., gold, silver, and alloys) as nucleation centers in the production of GaN to overcome these challenges was already reported, 26−28 while Valenzuela-Hernandez et al 29 obtained wurtzite GaN samples with the hexagonal structure on Au/ Si(100).…”

Section: ■ Introductionmentioning

confidence: 99%

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Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Valenzuela-Hernandez,

Rangel,

García

et al. 2023

ACS Appl. Electron. Mater.

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In this report, the results of gallium nitride (GaN) crystal growth on a silicon substrate covered by gold nanoparticles (AuNPs) are described using the chemical vapor deposition (CVD) technique. The formation of AuNPs by solid-state dewetting and a preferential crystallization of GaN species on the gold nucleation centers were demonstrated. The migration and embedding of gold centers during the ripening of GaN structures were evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Embedded AuNPs endowed the structural and optical properties of a semiconductor, related to the particle size, GaN crystallite, and plasmon–exciton interactions. Photoluminescence (PL) and UV–vis spectroscopy revealed a reduction in the intensity of the near band emission (NBE) at 3.4 eV in the gold-nucleated film in addition to a broadening of the absorption band edge. An increase in the density current of 0.046–0.142 mA/cm2 in a gold-nucleated GaN-based p–n junction was obtained, attributed to the localized surface plasmon resonance (LSPR) effects of the embedded AuNPs. Beyond the advantages of applying group III nitrides in the electronic field, appropriate modification of the preparation method of these materials with metallic covered substrates could provide them with specific properties, according to a targeted application.

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Section: ■ Results and Discussionmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Valenzuela-Hernandez,

Rangel,

García

et al. 2023

ACS Appl. Electron. Mater.

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“…21,22 Recently, it has been reported that high crystalline quality GaN and InGaN can be obtained by using AuNPs as nucleation centers. 23,24 Moreover, NPs have been used to promote surface plasmonic effects (LSPR) in photovoltaic devices, which induce several effects, such as charge transport, absorption, light scattering, and the improvement of local electric fields, related to the characteristics of the surface plasmon resonance of NPs. 25−27 Several reports mentioned that the use of metallic NPs in InGaN-based solar cells increases the efficiency of the device and is attributed to the induction of LSPR effects produced by the NPs.…”

Section: ■ Introductionmentioning

confidence: 99%

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

Valenzuela-Hernandez,

Rangel,

García

et al. 2024

ACS Appl. Electron. Mater.

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In this report, the results of indium gallium nitride (InGaN) grown by chemical vapor deposition (CVD) on a sapphire substrate covered by gold nanoparticles (AuNPs) are discussed. AuNPs were formed by solid-state dewetting from a thin gold film. The samples on AuNPs were compared with a series of InGaN films grown with the two-step method. X-ray diffraction (XRD) and Raman spectroscopy expose higher indium incorporation in InGaN on AuNPs than in films grown by the two-step method. The effect of AuNPs on the surface morphology and compactivity of InGaN films was studied by scanning electron microscopy (SEM). An energy reduction of the absorption band edge was evidenced by UV−vis spectroscopy diffuse reflectance (DFR) and absorbance. Photoluminescence (PL) and cathodoluminescence (CL) revealed a passivation in the intensity of the near-band emission (NBE) in the InGaN/ AuNPs films. An increase in the density current of 127−182 μA/cm 2 in the goldnucleated InGaN-based p−n junction was obtained by the induced localized surface plasmon resonance (LSRP) effect and the enhancement of InGaN phase stability. The implementation of AuNP-covered substrates in the growth of group III nitrides can be an alternative for improving InGaN phase miscibility and imparting suitable properties for photovoltaics applications aiming to achieve high-efficiency InGaN-based solar cells.

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Ammonia thermally treated gallium nitride deposited on gold-nucleation sites

Cited by 2 publications

References 48 publications

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p–n Junctions

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