Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Wang, Buguo; Bliss, D.; Suscavage, Michael J.; Swider, Stacy; Lancto, R.; Lynch, C.; Weyburne, David; Li, Ti; Ponce, Fernando

doi:10.1016/j.jcrysgro.2010.10.080

Cited by 19 publications

(16 citation statements)

References 18 publications

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“…2(a)]. Recent progress by others 21) in improving the transparency of ammonothermal GaN suggests that reducing impurity leading to rapid increase of the m-plane surface area. The (10 1 1) crystal in Fig.…”

Section: Resultsmentioning

confidence: 99%

High Quality, Low Cost Ammonothermal Bulk GaN Substrates

Ehrentraut

Pakalapati

Kamber

et al. 2013

Jpn. J. Appl. Phys.

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Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 m/h and rates in the 10-30 m/h range are routinely observed for all orientations. These values are 5{100Â larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 Â 10 5-5 Â 10 6 cm À2. Dislocation densities below 10 4 cm À2 are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers.

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Section: Resultsmentioning

confidence: 99%

High Quality, Low Cost Ammonothermal Bulk GaN Substrates

Ehrentraut

Pakalapati

Kamber

et al. 2013

Jpn. J. Appl. Phys.

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“…Figure 15.21 shows a transparent (0001) GaN crystal grown under improved ammono-basic conditions [90]. Figure 15.21 shows a transparent (0001) GaN crystal grown under improved ammono-basic conditions [90].…”

Section: )mentioning

confidence: 99%

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Ehrentraut

Boćkowski

2015

Handbook of Crystal Growth

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“…Ammonothermal growth of GaN has been of great interest lately as a viable path for manufacturing of low cost, high quality bulk GaN substrates . It is analogous to the well‐known hydrothermal technique, but uses supercritical ammonia with an added mineralizer as the solvent instead of supercritical water.…”

Section: Introductionmentioning

confidence: 99%

Transparent, conductive bulk GaN by high temperature ammonothermal growth

Jiang

Ehrentraut

Cook

et al. 2015

Physica Status Solidi (b)

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A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52 mm in diameter and to a thickness of greater than 2 mm. X‐ray characterization of the crystals shows excellent crystallinity with radii of curvature > 20 m and a 201 rocking curve FWHM of <30 arcsec. Hall effect and optical absorption measurements performed on the crystal show a free carrier concentration of 1.1 × 1018 cm−3 and an absorption coefficient of 1 cm−1 at 450 nm and 2 cm−1 at 410 nm, meeting the substrate requirements for use as a native substrate in blue or violet LED devices. To the best of our knowledge, this is the lowest optical absorption coefficient reported for ammonothermally‐grown GaN having a carrier concentration above 1018 cm−3.

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Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Cited by 19 publications

References 18 publications

High Quality, Low Cost Ammonothermal Bulk GaN Substrates

High Quality, Low Cost Ammonothermal Bulk GaN Substrates

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Transparent, conductive bulk GaN by high temperature ammonothermal growth

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