Amorphization of PLZT Material by 1.5 MeV Krypton Ion Irradiation with In Situ TEM Observation

Wang, L.M.; Wu, A.Y.; Ewing, Rodney C.

doi:10.1557/proc-268-343

Cited by 9 publications

(7 citation statements)

References 7 publications

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“…A lower ratio of S N /S E , calculated for low-mass ions like He, requires a rise of the number of displacements, necessary to amorphize clinoenstatite, indicating an in-situ annealing process due to the enhanced ratio between electronic and nuclear energy deposition. This result had been previously confirmed for olivines by Wang & Ewing (1992), who could not trigger an amorphization process by 400 keV He + ions.…”

Section: Resultssupporting

confidence: 72%

“…Therefore we can conclude that the discussed annealing processes are not efficient enough to trigger recrystallization but may have repercussions on processing or evaporation of ice mantles around the grains. Wang & Ewing (1992) had proven that the critical dose necessary for amorphization of olivines rapidly increases with increasing magnesium content. The critical amorphization dose for fayalite is less than 1/4 of the critical dose of (Mg 0.88 Fe 0.12 ) 2 SiO 4 for 1.5 MeV Kr + ions at room temperature.…”

Section: Conclusion Of Astrophysical Relevancementioning

confidence: 99%

“…Krätschmer & Huffman (1979) produced a surface layer of highly disordered olivine by exposure of the polished natural mineral to a fluence of 5×10 16 ions/cm 2 of 1.5 MeV Ne + ions. Amorphization studies of forsterite and five further members of the olivine series had already been performed by Wang & Ewing (1992) and Wang et al (1994) for 1.5 MeV krypton ions. The authors demonstrated that the critical amorphization dose increases rapidly with increasing Mg/Fe ratio.…”

Section: Introductionmentioning

confidence: 99%

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Structural processing of enstatite by ion bombardment

Jäger

Fabian

Schrempel

et al. 2003

A&A

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Abstract. During their lifetime, cosmic dust silicates suffer from a continuous processing by annealing, cosmic ray and UV irradiation, destruction and possibly also interstellar recondensation. Since the discovery that a significant proportion of stardust silicates leaves their star in crystalline form, the question arose as to why the interstellar silicate dust component does not show any indication of crystallinity. Amorphization due to ion irradiation is one possible explanation for the effect. In this paper, the results of irradiation experiments of submicrometre-sized clinoenstatite (MgSiO 3 ) particles with 400 keV Ar

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Section: Resultssupporting

confidence: 72%

Section: Conclusion Of Astrophysical Relevancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural processing of enstatite by ion bombardment

Jäger

Fabian

Schrempel

et al. 2003

A&A

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“…The materials listed in this study can most easily be amorphized at room temperature 5 -under heavy ion irradiation at a faraction of a displacement per atom (dpa) [16,[22][23][24][25][26][27] except for UOZ. In most cases, radiation-induced nanophase formation has been found to be closely related to the process of radiation-induced solid-state amorphization.…”

Section: Resultsmentioning

confidence: 99%

Irradiation-induced nanostructures

Wang

Ewing

et al. 2000

Materials Science and Engineering: A

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'~~1~f~q$ e t.&" P8TJ"A new air-stable electronic surface passivation for GaAs and other III-V comp u semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is ro ust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiOXNYdielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopes indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.. High surface recombination velocities andiorFermi-level pinning due to a high density of mid-gap surface states (> 10'2/cm2) have diminished the performance of heterojunction bipolar transistors (HBTs) and delayed the realization of metal-insulatorsemiconductor (MIS) devices in III-V compound semiconductors.Reaction of the GaAs surface with sulfur or its compounds (1-11) produces a dramatic decrease in the interface states responsible for surface recombination and Fermi-level pinning. However, most sulfur-treated surfaces rapidly reoxidlze, returning to their original high density of mid-gap states. Previously reported air-stable S-based pa.ssivation techniques include a glow discharge in sulfur vapor with GaAs heated to 400°C (10) and immersion in S,CIJCC1, (1 1). Despite their air-stability, these processes are limited for actual device applications by either the high temperatures employed (10) or the over-etching of GaAs by S,Cl,, which necessitates in-situ measurement of current gain to terminate the process at maximum device performance (1 1). We have developed a new method whereby a high-quality semiconductor surface is preserved against air oxidation by sulfidation followed by reaction with a suitable metal ion in aqueous solution at room temperature. This process has been applied to prefabricated HBTs to drastically reduce the current gain dependence on surface area. It is also robust against silicon oxynitride encapsulation in a high-density plasma deposition system, making it suitable for fabrication of practical devices.Ĩ n this new process, the semiconductor surfaces were first sulfided using the S vapor and UV light as previously described (5,6). Samples were then immersed in an aqueous solution of a suitable metal salt for several seconds, rinsed with DI water, and blown dry with N2. Performing these steps in a N2 atmosphere prevents degradation of photosulfided surfaces by 0, prior to immersion and drying. After treatment with the metal salt, samples were exposed to atmosphere. The compositions of GaAs (100) surfaces before and after sulfur passivation were determined using X-ray photoelectron spectroscopy (XPS) (5). Photoluminescence (PL) intensity was employed as a relative measure of the depth of the surface depletion region, assuming negligible PL emission from the depleted depth , d = NJNa,, where N, is the surface state density an...

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“…Other property changes associated with this a-decay-induced transformation have been summarized in a recent review by Ewing et al [22]. Fission track annealing studies of natural apatites [17] and ion-beam irradiation studies of natural and synthetic apatites [21,23] suggest that simultaneous thermal recovery processes will minimize or even prevent amorphization in Pucontaining apatites under deep borehole conditions (temperature > 150-200°C). The chemical durability of natural apatites is well demonstrated by the 2 billion year old, 235U-enriched Oklo apatites [17].…”

Section: Waste Forms For Piutoniummentioning

confidence: 99%