Amorphization of the subsurface regions in ion-implanted alloys

Ivchenko, V. A.; Syutkin, N. N.; Kuznetsova, L. Y.

doi:10.1134/1.1262905

Cited by 8 publications

(6 citation statements)

References 1 publication

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“…Regardless of the study of emission properties, the bombardment of surfaces by low-energy (up to keV units) atoms and ions with the aim of cleaning them, ion etching, etc is a widely used technological method. The information on the state of surfaces, subjected to ion bombardment accumulated up to date (see, for example, [31][32][33][34] and the literature cited there), allows us to conclude that with low-energy bombardment the surface is modified to a depth of tens of atomic layers. Thus, when a tungsten surface is bombarded with helium ions with an average energy of w i ≈ 150 eV and a current of 0.3-0.4 μA at a total dose of 10 18 ion cm −2 , the concentration of helium atoms in the surface layer reaches tens of the percent of the tungsten atoms concentration [35].…”

Section: Electron Emission From Cold Cathodes In a Gas Dischargementioning

confidence: 99%

Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons

Бохан¹,

Гугин²,

Лаврухин³

et al. 2020

Plasma Sources Sci. Technol.

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Novel opportunities of waveform tailoring for controlling plasma parameters based on the development of a high-voltage gas-discharge switch with a subnanosecond breakdown time and high pulse repetition frequency are discussed. The studies of characteristics and breakdown development mechanisms of the switch based on an 'open' discharge-kivotron are summarized. The discharge in the switch is carried out in conditions when counter-propagating electron beams in high electric field are generated. In this case, when using helium as an operating medium, firstly, atoms are effectively excited into the resonance state by fast particles. Secondly, due to the Doppler effect, resonant photons without reabsorption reach the cathode surface, maintaining the discharge current due to photoemission. Thirdly, fast heavy particles modify the cathode surface, thereby significantly (up to an order of magnitude) increasing the photoemission coefficient. The combination of these processes leads to an increase in the switching rate with an increase in the operating voltage U and helium pressure p He . At U > 20 kV and p He > 10 Torr, the switching time becomes less than 100 ps both in the experiment and according to the simulation. It is preferable to use planar geometry without a drift space as a switching device, in which, on the one hand, the most complete use of EB energy is realized in creating a plasma with a high charge density, on the other hand, a small wave impedance of the switch is realized. As a result, currents of tens of kiloamperes are achieved at voltages up to 100 kV. In an interpulse period plasma in the discharge gaps recombinates fast. As a result, switches can operate up to pulse repetition frequency 100 kHz. Together these achievements open new opportunities to control plasma parameters.

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Section: Electron Emission From Cold Cathodes In a Gas Dischargementioning

confidence: 99%

Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons

Бохан¹,

Гугин²,

Лаврухин³

et al. 2020

Plasma Sources Sci. Technol.

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show abstract

“…Experimental studies of changes in the metal and alloy structure after radiation exposure [1][2][3][4][5][6] showed that interaction between accelerated charged ions and the substance initiates formation of amorphous, nanomicrocrystalline, and submicrocrystalline states in the subsurface regions.…”

Section: Introductionmentioning

confidence: 99%

Field Ion Microscopy of Radiation Effects in Metallic Materials

Ivchenko¹

2019

Hysteresis of Composites

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Radiation effects in metallic materials were investigated using the field ion microscopy technique. Modes of radiation exposure for development of amorphized states in subsurface regions of platinum are determined. It is found that the phenomenon of metal amorphization in the subsurface regions occurs up to a sample depth of 12 nm under an increase in the fluence to 10 18 ions/cm 2 and the above irradiation energies. The method of field ion microscopy was used to determine the threshold of nanopore formation in ion-implanted platinum. Experimental results on atomic-spatial investigation of radiative defect formation in surface layers of materials, initiated by neutron bombardment (of Pt, E > 0.1 MeV) and ion implantation (in Cu 3 Au: E = 40 keV, F = 10 16 ion/m 2 , j = 10 −3 A/cm 2), are considered. Mechanisms of the radiation-induced development of nanostructures in subsurface metal regions have been analyzed based on field ion microscopy data. It is concluded that the modification of near-surface metal regions on a nanometer scale as a result of the interaction with Ar + ion beams proceeds by several mechanisms.

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“…Experimental studies of changes in the metal and alloy structure after radiation exposure [1][2][3][4][5][6] showed that interaction between accelerated charged ions and the substance initiates formation of amorphous, nano and submicrocrystalline states in the subsurface regions.…”

Section: Introductionmentioning

confidence: 99%

Radiation Defects in HCC Materials at Atomic Spatial Level

Ivchenko

2018

KEM

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Diagnostics of the irradiated structure was carried out using the field ion microscopy technique. Modes of radiation exposure for development of amorphized states in subsurface regions of platinum are determined. It is shown that radiation exposure of pure metals with an energy of E = 30 keV under variation of the fluence of the charged argon ion beams by two orders of magnitude (1016 to 1018 ions/cm2) produces a significant effect on the kinetics of defect formation in the subsurface regions of irradiated materials. As a result of irradiation up to a higher fluence (F = 1017 ions/cm2), the effect of formation of the block nanocrystalline structure (at the block size of 1–5 nm) is observed in subsurface regions at a depth of at least 20 nm from the irradiated surface. It is found that the phenomenon of metal amorphization in the subsurface regions occurs up to a sample depth of 12 nm under an increase in the fluence to 1018 ions/cm2 and the above irradiation energies. Experimental results on atomic–spatial investigation of radiative defect formation in surface layers of materials, initiated by ion implantation (in Cu3Au: E = 40 keV, F = 1020 ion/m2, j = 10–3 A/cm2), are considered. The experimentally established average size of a radiation cluster (disordered zone) in the alloy after ion bombardment is 4 × 4 × 1.5 nm.

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Amorphization of the subsurface regions in ion-implanted alloys

Cited by 8 publications

References 1 publication

Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons

Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons

Field Ion Microscopy of Radiation Effects in Metallic Materials

Radiation Defects in HCC Materials at Atomic Spatial Level

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