Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Abstract

The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results on amorphous AlN films obtained by...

Atomic layer deposition fabricated core–shell nanostructures for enhanced polyetherimide composite dielectrics

“…S3 and S4, ESI †). 30 ALD fabricated crystalline @ amorphous core-shell structures tend to be crystallized through post-deposition annealing and offer an alternative way for crystalline shell conversion. 31 The distribution of the llers in the composite lm and elemental mapping is shown in Fig.…”

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

“…Alternative nitrogen precursors are forming gas (N 2 + H 2 ), 46,54−71 hydrazine (N 2 H 4 ), 72−74 hydrazinium chloride (N 2 H 5 Cl), 75 and monomethyl hydrazine (N 2 CH 6 ). 76 Alternative metal precursors are AlCl 3 , 26,77−79 TEA, 80,81 TMAA, 82,83 TDMAA, 74,84−86 DMEAA, 87−90 TDEAA, 72 TiBA, 75 and DMAA. 91 Additionally, metal precursors are being developed tailored to the ALD of AlN.…”

“…Besides this classic set of precursors, other precursors and combinations have been introduced. Alternative nitrogen precursors are forming gas (N 2 + H 2 ), ,− hydrazine (N 2 H 4 ), − hydrazinium chloride (N 2 H 5 Cl), and monomethyl hydrazine (N 2 CH 6 ) . Alternative metal precursors are AlCl 3 , ,− TEA, , TMAA, , TDMAA, ,− DMEAA, − TDEAA, TiBA, and DMAA .…”

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

“…Aluminum and zinc are the two prototype metal components most commonly applied in conventional ALD technology; well-established ALD processes developed for these two metals cover a variety of materials ranging from the pure metals 20 and intermetallics 21,22 to metal oxides, [23][24][25][26] sulfides, 3,27,28 and nitrides. [29][30][31][32] As for the ALD/MLD processes, the Al-and Zn-based metal-organic films deposited so far, include a variety of metal alkyls (so-called alucones/ zincones), [33][34][35] and also carboxylates, [36][37][38] and amides 39 using organic diols, carboxylic acids or amines, respectively, as the organic precursor. It is well known yet, somewhat surprising, that most of these different Al/Zn-containing thin-film materials have been deposited from the same Al and Zn precursors, i.e., trimethyl aluminum (TMA) and diethyl zinc (DEZ).…”