Amorphous and Nanocrystalline Silicon Solar Cells and Modules

Guha, S.; Yang, Jeffrey; Yan, Baojie

doi:10.1016/b978-0-44-453153-7.00026-2

Cited by 14 publications

(2 citation statements)

References 152 publications

(148 reference statements)

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“…Our design goal for high-efficiency tandem cells with IR is to reach a minimal matched current density of 12.5 mA·cm −2 , as proposed by Guha et al [14]. The bottom cells are therefore required to deliver at least twice this value, i.e., 25 mA·cm −2 .…”

Section: A Bottom Cell I-layer Thickness Series With High R C For Himentioning

confidence: 99%

Optimization of the asymmetric intermediate reflector morphology for high stabilized efficiency thin n-i-p micromorph solar cells

Biron¹,

Hänni²,

Boccard³

et al. 2013

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

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Abstract-This paper focuses on our latest progress in n-i-p thinmicromorph solar-cell fabrication using textured back reflectors and asymmetric intermediate reflectors, both deposited by lowpressure chemical vapor deposition of zinc oxide. We then present microcrystalline bottom cells with high crystallinity, which yield excellent long wavelength response for relatively thin absorber thickness. In a 1.5-μm-thick μc-Si:H single-junction n-i-p solar cell, we thus obtain a short-circuit current density of 25.9 mA·cm −2 , resulting in an initial cell efficiency of 9.1%. Subsequently, the roughness of the intermediate reflector layer is adapted for the growth of high-performance amorphous silicon (a-Si:H) top cells. Combining bottom cells with high current, an optimal intermediate reflector morphology and a 0.22-μm-thick a-Si:H top cell, we reach high initial open-circuit voltages of 1.45 V, and we obtain a stabilized cell with an efficiency of 11.1%, which is our best stable efficiency for n-i-p solar cells.

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Section: A Bottom Cell I-layer Thickness Series With High R C For Himentioning

confidence: 99%

Optimization of the asymmetric intermediate reflector morphology for high stabilized efficiency thin n-i-p micromorph solar cells

Biron¹,

Hänni²,

Boccard³

et al. 2013

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

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“…The silicon thickness of these solar cells is typically kept below 300 nm, due to the high defect density of a-Si:H and the resulting short drift (or diffusion) length of the photogenerated charge carriers [1]. Hence, light scattering is essential for optical absorption enhancement inside such thin a-Si:H absorber layers, in particular for the wavelength range 600-800 nm [2,3]. In the past, various light scattering technologies were used in a-Si:H cells to enhance light absorption in this wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Thin-film a-Si:H solar cells processed on aluminum-induced texture (AIT) glass superstrates: prediction of light absorption enhancement

et al. 2015

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Light scattering superstrates are important for thin-film a-Si:H solar cells. In this work, aluminum-induced texture (AIT) glass, covered with nonetched Al-doped ZnO (AZO), is investigated as an alternative to the commonly used planar glass with texture-etched AZO superstrate. Four different AIT glasses with different surface roughnesses and different lateral feature sizes are investigated for their effects on light trapping in a-Si:H solar cells. For comparison, two reference superstrates are investigated as well: planar glass covered with nonetched AZO and planar glass covered with texture-etched AZO. Single-junction a-Si:H solar cells are deposited onto each superstrate, and the scattering properties (haze and angular resolved scattering) as well as the solar cell characteristics (current-voltage and external quantum efficiency) are measured and compared. The results indicate that AIT glass superstrates with nonetched AZO provide similar, or even superior, light trapping than the standard reference superstrate, which is demonstrated by a higher short-circuit current Jsc and a higher external quantum efficiency. Using the trapped light fraction δ, a quantity based on the integrated light scattering at the AZO/a-Si:H interface, we show that Jsc linearly increases with δ in the scattering regime of the samples, regardless of the type of superstrate used.

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