Amorphous and Nanocrystalline Silicon Solar Cells and Modules

Guha, S.; Yang, J.; Yan, B.

doi:10.1016/b978-0-12-803581-8.00835-3

Cited by 4 publications

(3 citation statements)

References 158 publications

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“…We extend the models to include a Lorentz oscillator component for the high absorption region. We compare the extended models with experimental data at room temperature for direct electronic transitions materials such as methylammonium lead iodide (MAPI), which optical properties can be tuned stoichiometrically for tandem solar cells [15,16]; gallium arsenide (GaAs) and indium phosphide (InP), whose applications are in high-speed, optoelectronic and photovoltaic devices [17,18]; indirect electronic transitions materials such as gallium phosphide (GaP) which is used typically in light emitting devices technology [19]; crystalline silicon (c-Si), which is widely used in electronic and photovoltaic applications [20,21]; and amorphous hydrogenated silicon (a-Si:H), which is used in thin film solar cells [22,23].…”

Section: Introductionmentioning

confidence: 99%

New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductors

Lizárraga,

Enrique-Morán,

Tejada

et al. 2023

J. Phys. D: Appl. Phys.

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We propose new optical dispersion models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the semi-empirical Tauc-Lorentz dispersion model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the dispersion models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behavior due to electronic transitions above the fundamental region. We apply and test these models on optical data of direct (MAPbI3, GaAs and InP), indirect (GaP and c-Si), and amorphous (a-Si:H) semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our results with other similarly inspired dispersion models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.

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Section: Introductionmentioning

confidence: 99%

New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductors

Lizárraga,

Enrique-Morán,

Tejada

et al. 2023

J. Phys. D: Appl. Phys.

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“…Theoretically, one of the main requirements in a solar cell's back reflection is the Lambertian scatterer, which satisfies the light path increment and results in light absorption enhancement [7]. The improvement can be achieved through white back-reflective material since light path length can be increased by 2n 2 , where n is the active material's refractive index [33][34][35]. For MoS 2 as back-reflector material, in addition to its relatively high reflectivity in the NIR region inherited from the real refractive index (see Figure 1), MoS 2 uniquely possesses a low-light-absorption profile due to its low extinction coefficient (k) in the long wavelength, which both (i.e., high real refractive index and low absorptive coefficient) makes it a suitable candidate for near-infrared (NIR) > 700 nm [31,34].…”

Section: Introductionmentioning

confidence: 99%

Raytracing Modelling of Infrared Light Management Using Molybdenum Disulfide (MoS2) as a Back-Reflector Layer in a Silicon Heterojunction Solar Cell (SHJ)

et al. 2022

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The silicon heterojunction solar cell (SHJ) is considered the dominant state-of-the-art silicon solar cell technology due to its excellent passivation quality and high efficiency. However, SHJ’s light management performance is limited by its narrow optical absorption in long-wave near-infrared (NIR) due to the front, and back tin-doped indium oxide (ITO) layer’s free carrier absorption and reflection losses. Despite the light-trapping efficiency (LTE) schemes adopted by SHJ in terms of back surface texturing, the previous investigations highlighted the ITO layer as a reason for an essential long-wavelength light loss mechanism in SHJ solar cells. In this study, we propose the use of Molybdenum disulfide (MoS2) as a way of improving back-reflection in SHJ. The text presents simulations of the optical response in the backside of the SHJ applying the Monte-Carlo raytracing method with a web-based Sunsolve high-precision raytracing tool. The solar cells’ electrical parameters were also resolved using the standard electrical equivalent circuit model provided by Sunsolve. The proposed structure geometry slightly improved the SHJ cell optical current density by ~0.37% (rel.), and hence efficiency (η) by about 0.4% (rel.). The SHJ cell efficiency improved by 21.68% after applying thinner back ITO of about 30 nm overlayed on ~1 nm MoS2. The efficiency improvement following the application of MoS2 is tentatively attributed to the increased NIR absorption in the silicon bulk due to the light constructive interface with the backside components, namely silver (Ag) and ITO. Study outcomes showed that improved SHJ efficiency could be further optimized by addressing front cell components, mainly front ITO and MoS2 contact engineering.

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“…However, light-induced degradation (Staebler-Wronski effect) is a known phenomenon that degrades the efficiency of a-Si:H solar cells when exposed to sunlight. To minimize the lightinduced degradation effect, absorber layer thicknesses of less than 250 nm are required, which demands excellent light trapping in the structure [1].…”

Section: Introductionmentioning

confidence: 99%

Optical Absorption Enhancement in Amorphous Silicon Films and Solar Cell Precursors Using the Aluminum-Induced Glass Texturing Method

Sahraei

Venkataraj²,

Premachandran³

et al. 2014

International Journal of Photoenergy

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One of the key issues of thin-film silicon solar cells is their limited optical absorptance due to the thin absorber layer and the low absorption coefficient for near-infrared wavelengths. Texturing of one or more interfaces in the layered structure of these cells is an important technique to scatter light and enhance the optical pathlength. This in turn enhances the optical absorption of the solar radiation in the absorber layer and improves the solar cell efficiency. In this paper we investigate the effects of textured glass superstrate surfaces on the optical absorptance of intrinsic a-Si:H films and a-Si:Hp-i-nthin-film solar cell precursors deposited onto them. The silicon-facing surface of the glass sheets was textured with the aluminium-induced glass texturing method (AIT method). Absorption in both intrinsic silicon films and solar cell precursor structures is found to increase strongly due to the textured glass superstrate. The increased absorption due to the AIT glass opens up the possibility to reduce the absorber layer thickness of a-Si:H solar cells.

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Amorphous and Nanocrystalline Silicon Solar Cells and Modules

Cited by 4 publications

References 158 publications

New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductors

New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductors

Raytracing Modelling of Infrared Light Management Using Molybdenum Disulfide (MoS2) as a Back-Reflector Layer in a Silicon Heterojunction Solar Cell (SHJ)

Optical Absorption Enhancement in Amorphous Silicon Films and Solar Cell Precursors Using the Aluminum-Induced Glass Texturing Method

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