Amorphous bismuth and GO co-doped WO<sub>3</sub> electrochromic film with fast-switching time and long-term stability

Zheng, Jin You; Sun, Qimeng; Yang, Huijing; Yu, Shuang; Li, Mengsi; Yu, Xiaomei; Wang, Chengduo; Liu, Tiantian; Li, Songjie

doi:10.1039/d3dt03805j

Cited by 2 publications

(1 citation statement)

References 34 publications

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“…The fabrication of WO 3 films for EC applications is achieved through various techniques including magnetron sputtering [ 20 , 21 , 22 , 23 , 24 ], thermal and electron beam evaporation [ 25 , 26 , 27 , 28 , 29 ], chemical vapor deposition (CVD) [ 30 , 31 ], sol-gel processes [ 32 , 33 , 34 , 35 ], and hydrothermal reactions [ 36 , 37 , 38 , 39 , 40 , 41 , 42 ]. Each method presents its own set of challenges regarding production costs, experimental conditions, and scalability.…”

Section: Introductionmentioning

confidence: 99%

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Wang,

Zhai,

2024

Micromachines

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The sol-gel method is a widely adopted technique for the preparation of tungsten trioxide (WO3) materials, favored for its cost-effectiveness and straightforward production procedures. However, this method encounters challenges such as prolonged annealing periods and limited flexibility in fabricating patterned WO3 films. This study introduces a novel approach that integrates femtosecond laser processing with the sol-gel method to enhance the fabrication of WO3 films. By adjusting polyvinylpyrrolidone (PVP) concentrations during sol-gel synthesis, precise control over film thickness and optimized film properties were achieved. The innovative technique significantly reduced the annealing time required to achieve an 80% transmittance rate from 90 min to 40 min, marking a 56% decrease. Laser processing increased the surface roughness of the films from Sa = 0.032 to Sa = 0.119, facilitating enhanced volatilization of organics during heat treatment. Additionally, this method improved the transmittance modulation of the films by 22% at 550 nm compared to unprocessed counterparts. This approach not only simplifies the manufacturing process but also enhances the optical efficiency of electrochromic devices, potentially leading to broader applications and more effective energy conservation strategies.

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Section: Introductionmentioning

confidence: 99%

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Wang,

Zhai,

2024

Micromachines

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Transparent pn Junction in ZnCo₂O₄/Bi₂WO₆ Quantum Dots/WO₃ via Surface Plasma Modification for Photovoltaic Enhancement and Self-Cleaning

He,

Wang,

Wang

et al. 2024

ACS Appl. Nano Mater.

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A self-cleaning transparent device in a Bi 2 WO 6 QD-modified ZnCo 2 O 4 /WO 3 pn junction is prepared via the sol−gel-hydrothermal-freeze-drying-surface plasma method. The ZnCo 2 O 4 /Bi 2 WO 6 QDs/WO 3 exhibits transmittance of ∼85%, photovoltaic enhancement of ∼1.6 × 10 3 -fold (PCE of ∼1.16%), stable output during 5 months, and good selfcleaning via surface hydrophobicity (contact angle of ∼131.5°). It is mainly attributed to the Bi 2 WO 6 QD and plasma modification; in addition to appropriate potential and high quantum yield, which can improve the carrier kinetic equilibrium for transparency− photovoltaic balancing, the surface plasma modification can also enhance the solar efficiency and carrier efficiency, while achieving the self-cleaning. Moreover, the extra hole carrier caused by the Co 3+ /Co 2+ mixed state and interstitial oxygen can optimize the kinetic equilibrium further, and the inorganic WO 3 , Bi 2 WO 6 QDs, and ZnCo 2 O 4 with good physical−chemical stability can provide good structural stability for actual application effectively.

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Amorphous bismuth and GO co-doped WO₃ electrochromic film with fast-switching time and long-term stability

Abstract: The sol-gel process for fabricating electrochromic thin films is straightforward, offering advantages such as low cost and ease of compositional control. Herein we prepared GO-Bi-WO3 films with improved electrochromic performance...

Cited by 2 publications

References 34 publications

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Transparent pn Junction in ZnCo₂O₄/Bi₂WO₆ Quantum Dots/WO₃ via Surface Plasma Modification for Photovoltaic Enhancement and Self-Cleaning

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Amorphous bismuth and GO co-doped WO3 electrochromic film with fast-switching time and long-term stability

Abstract: The sol-gel process for fabricating electrochromic thin films is straightforward, offering advantages such as low cost and ease of compositional control. Herein we prepared GO-Bi-WO3 films with improved electrochromic performance...

Cited by 2 publications

References 34 publications

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Rapid Fabrication of Tungsten Oxide-Based Electrochromic Devices through Femtosecond Laser Processing

Transparent pn Junction in ZnCo2O4/Bi2WO6 Quantum Dots/WO3 via Surface Plasma Modification for Photovoltaic Enhancement and Self-Cleaning

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Amorphous bismuth and GO co-doped WO₃ electrochromic film with fast-switching time and long-term stability

Transparent pn Junction in ZnCo₂O₄/Bi₂WO₆ Quantum Dots/WO₃ via Surface Plasma Modification for Photovoltaic Enhancement and Self-Cleaning