1992
DOI: 10.1109/23.159670
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Amorphous Ge bipolar blocking contacts on Ge detectors

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Cited by 69 publications
(41 citation statements)
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“…As shown in Ref. [14], and also observed in Ref. [8], a better charge collection is achieved with a Ge or Si amorphous layer under the electrodes.…”
Section: B Detectorssupporting
confidence: 69%
“…As shown in Ref. [14], and also observed in Ref. [8], a better charge collection is achieved with a Ge or Si amorphous layer under the electrodes.…”
Section: B Detectorssupporting
confidence: 69%
“…These detectors are nearly identical to the detectors (Figs. J1, J2) developed by the Lawrence Berkeley National Laboratory (LBNL) for the Nuclear Compton Telescope (NCT) balloon payload [12], utilizing their pioneering amorphous Ge contact technologies [66]. These GeDs operate as fully-depleted p-i-n junctions, with the blocking electrode made from a ~0.1-µm thick layer of amorphous Ge which is deposited on the entire detector surface.…”
Section: Germanium Detectorsmentioning
confidence: 99%
“…Even so, substantial progress has been made in the development of these detectors [1][2][3][4][5][6][7][8][9][10][11]. One advancement has been the amorphous semiconductor contact technology [10][11][12][13]. This technology offers the advantages of producing contacts that have thin dead layers, can be fine-pitched, and exhibit good blocking behavior under either bias polarity.…”
Section: Introductionmentioning
confidence: 99%