Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Jang, Young‐Il; Park, Junhyeong; Kang, Jimin; Lee, Soo-Yeon

doi:10.1021/acsaelm.1c01088

Cited by 59 publications

(29 citation statements)

References 181 publications

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“…[272] In contrast to Si solar cells, the advantage of CIGS is that the band-gap energy could be regulated to effectively capture the sun spectra, allowing it to be widely used for WS. [273] To circumvent the shortage of modest potential to operate OWS, integrated serial into a monolith circuit may be used to generate adequate fuel for the complete response. For example, Jacobsson et al claimed that three series-connected composite semiconductor CIGS PV electrolysis may successfully generate solar WS at AM 1.5G illumination (Figure 23d).…”

Section: By Conventional Solar Cellsmentioning

confidence: 99%

Recent Advances and Future Perspectives of Metal‐Based Electrocatalysts for Overall Electrochemical Water Splitting

Hayat

Sohail

Ali

et al. 2022

The Chemical Record

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Recently, the growing demand for a renewable and sustainable fuel alternative is contingent on fuel cell technologies. Even though it is regarded as an environmentally sustainable method of generating fuel for immediate concerns, it must be enhanced to make it extraordinarily affordable, and environmentally sustainable. Hydrogen (H2) synthesis by electrochemical water splitting (ECWS) is considered one of the foremost potential prospective methods for renewable energy output and H2 society implementation. Existing massive H2 output is mostly reliant on the steaming reformation of carbon fuels that yield CO2 together with H2 and is a finite resource. ECWS is a viable, efficient, and contamination‐free method for H2 evolution. Consequently, developing reliable and cost‐effective technology for ECWS was a top priority for scientists around the globe. Utilizing renewable technologies to decrease total fuel utilization is crucial for H2 evolution. Capturing and transforming the fuel from the ambient through various renewable solutions for water splitting (WS) could effectively reduce the need for additional electricity. ECWS is among the foremost potential prospective methods for renewable energy output and the achievement of a H2‐based economy. For the overall water splitting (OWS), several transition‐metal‐based polyfunctional metal catalysts for both cathode and anode have been synthesized. Furthermore, the essential to the widespread adoption of such technology is the development of reduced‐price, super functional electrocatalysts to substitute those, depending on metals. Many metal‐premised electrocatalysts for both the anode and cathode have been designed for the WS process. The attributes of H2 and oxygen (O2) dynamics interactions on the electrodes of water electrolysis cells and the fundamental techniques for evaluating the achievement of electrocatalysts are outlined in this paper. Special emphasis is paid to their fabrication, electrocatalytic performance, durability, and measures for enhancing their efficiency. In addition, prospective ideas on metal‐based WS electrocatalysts based on existing problems are presented. It is anticipated that this review will offer a straight direction toward the engineering and construction of novel polyfunctional electrocatalysts encompassing superior efficiency in a suitable WS technique.

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Section: By Conventional Solar Cellsmentioning

confidence: 99%

Recent Advances and Future Perspectives of Metal‐Based Electrocatalysts for Overall Electrochemical Water Splitting

Hayat

Sohail

Ali

et al. 2022

The Chemical Record

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“…Compared to crystal oxides, AOS films can be deposited at room temperature, simplifying the preparation process, avoiding high-temperature annealing, and ensuring the feasibility of flexible optoelectronic synaptic devices. Even with so many merits, the research on AOS optoelectronic synapses has been very limited so far, with only several reports related to amorphous InGaZnO. − …”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

Yang

Yin

et al. 2022

ACS Appl. Mater. Interfaces

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Neuromorphic computing, which mimics brain function, can address the shortcomings of the "von Neumann" system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the advantages of low power consumption, low latency, and high stability. We demonstrate amorphous InAlZnO-based light-stimulated artificial synaptic devices with a thin-film transistor structure. The devices exhibit fundamental synaptic properties, including excitatory postsynaptic current, paired-pulse facilitation (PPF), and short-term plasticity to long-term plasticity conversion under light stimulation. The PPF index stimulated by 375 nm light is 155.9% when the time interval is 0.1 s. The energy consumption of each synaptic event is 2.3 pJ, much lower than that of ordinary MOS devices and other optical-controlled synaptic devices. The relaxation time constant reaches 277 s after only 10 light spikes, which shows the great synaptic plasticity of the device. In addition, we simulated the learning-forgetting-relearning-forgetting behavior and learning efficiency of human beings under different moods by changing the gate voltage. This work is expected to promote the development of high-performance optoelectronic synaptic devices for neuromorphic computing.

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“…Beyond the display backplane, amorphous InGaZnO (IGZO) has drawn significant attention for its applications to photonic devices such as memory, − neuromorphic computing, − and photodetectors. − Oxygen vacancy ( V O ), which is inevitable during the deposition process, is one of the most critical factors in determining the optoelectronic properties of IGZO. Despite the wide optical bandgap ( E opt,g > 3.0 eV), the V O for which the energy level is broadly distributed above the valence band maximum (VBM) facilitates photodetection in the visible range through the photoionization of V O to form V O 2+ and 2e – .…”

Section: Introductionmentioning

confidence: 99%

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Jang

Lee

2022

ACS Appl. Electron. Mater.

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We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF) magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON thin film grown under the highest nitrogen partial flow rate exhibits the lowest optical bandgap of 1.84 eV, excellent stability upon air exposure, an amorphous/nanocrystalline structure, and the strongest stoichiometric Zn3N2 chemical states. The highest field-effect mobility of 4.28 cm2 V–1 s–1, the largest responsivity, and the negligible persistent photoconductivity (PPC) effect against visible light are also realized by the thin-film transistor (TFT) configuration. The device performance of the ZnON phototransistor is compared to those of other oxide semiconductors of ZnO and InGaZnO (IGZO). Finally, an IGZO/ZnON phototransistor, where ZnON was deposited on top of IGZO by an in situ process, demonstrates high specific detectivities (1.65 × 1013, 1.35 × 1013, and 2.0 × 1014 Jones against red, green, and blue photons, respectively) without the PPC effect. We examined the photoluminescence (PL) spectra of ZnON with respect to nitrogen-associated defects, which are yet to be discussed, and emphasize that our optimum deposition process is free of the poisoning effect. To our knowledge, this is the first report on a ZnON phototransistor in which the channel was prepared by reactive sputtering of a ZnO target.

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Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Cited by 59 publications

References 181 publications

Recent Advances and Future Perspectives of Metal‐Based Electrocatalysts for Overall Electrochemical Water Splitting

Recent Advances and Future Perspectives of Metal‐Based Electrocatalysts for Overall Electrochemical Water Splitting

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

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