Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

Troughton, Joseph; Atkinson, D.

doi:10.1039/c9tc03933c

Cited by 109 publications

(80 citation statements)

References 330 publications

(330 reference statements)

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“…350,351 Amorphous indium gallium zinc oxide (a-IGZO) is one of the most successful commercialized oxide semiconductors in this century, widely used in thin-film transistors (TFTs) for high-resolution displays. 298,[352][353][354][355] Defects have a significant influence on a-IGZO materials and TFTs, i.e., while most defects are detrimental to device performance, some defects actually play a positive role in improving carrier density. 304,356,357 V O , metal-metal bonds and H incorporation are the three main defect types present in channel region of a-IGZO TFTs.…”

Section: Wide Bandgap Oxide Semiconductorsmentioning

confidence: 99%

“…368,369 The metal-metal bonds are associated to V O , formed by the binding of uncoordinated metal ions caused by deficient oxygen to eliminate the dangling bonds. 355 Additional sub-gap states are induced near CBM by metal-metal bonds and could significantly increase the off-state leakage current I off . 356,370,371 Reduction of metal-metal bonds generally follows the path with the decrease of V O , yet they are harder to eliminate for the additional energy required to break the bonds.…”

Section: Wide Bandgap Oxide Semiconductorsmentioning

confidence: 99%

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Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

et al. 2020

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Section: Wide Bandgap Oxide Semiconductorsmentioning

confidence: 99%

Section: Wide Bandgap Oxide Semiconductorsmentioning

confidence: 99%

Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

et al. 2020

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“…N‐type amorphous IGCO TFTs with a bottom‐gate staggered structure (as shown in Figure a, a conventional structure that is commonly used in the ubiquitous active matrix display) were fabricated on 100 nm thermally growth SiO 2 /Si substrates. A 40 nm‐thick IGCO semiconductor channel patterned by a metal mask was deposited at room temperature via radio frequency sputtering an IGCO ceramic target (In:Ga:Cd = 1:1:1) at a working power of 60 W along with an Ar/O 2 flow of 6/0.03 sccm.…”

mentioning

confidence: 99%

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Duan

Javaid

Liang

et al. 2020

Physica Rapid Research Ltrs

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Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near‐infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom‐gate thin‐film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat‐panel display industry. The IGCO TFTs, showing an ultrahigh field‐effect mobility up to 106 cm2 V−1 s−1, can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy‐related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices.

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“…This meets the requirements of low temperature preparation in the field of flexible display. In 2 O 3 has been widely studied in the preparation of TFT active layer due to its wide band gap, high mobility, high carrier concentration and good transparency [ 1 , 28 , 29 , 30 , 31 ], but there is still little research on the influence mechanism of amorphous In 2 O 3 electrical stability [ 32 ].…”

Section: Introductionmentioning

confidence: 99%

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Yao

et al. 2021

Micromachines

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In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

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Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

Abstract: This review covers the history, development, and state of the art, of metal oxide-based electronics, with particularly focus of indium-gallium-zinc-oxide.

Cited by 109 publications

References 330 publications

Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities

Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

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