Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Liu, Han-Yin; Hsu, Wei-Chou; Chen, Jui-Hsuan; Hsu, Pei-Huang; Lee, Ching-Sung

doi:10.1109/ted.2020.2965949

Cited by 18 publications

(10 citation statements)

References 23 publications

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“…Compared with the as-deposited ITZO thin film, the ITZO thin film with SiO 2 passivation layer experienced several additional fabrication steps and a period of storage, which would introduce extra moisture into the ITZO thin film and therefore enhance the relative MOH concentration. [41][42][43]50,51] The different relative concentrations of MV O and MOH in this work from the reported data [40,[52][53][54][55][56][57][58] may be attributed to different deposition/annealing conditions and/or different passivation layers.…”

Section: Mechanism Discussionmentioning

confidence: 94%

“…Besides, the relative MV O concentration is consistent to that of the ITZO thin film with ZrO x passivation layer [ 57 ] but much smaller than that of the ITZO thin film with Al 2 O 3 passivation layer. [ 40 ] The relative MOH concentration is significantly increased to 24.24%, compared to the as‐deposited ITZO thin film. Besides, this value is higher than that of ITZO thin film with Al 2 O 3 passivation layer [ 40 ] and that of ITZO thin film with ZrO x [ 57 ] but is consistent with the data of IGZO thin film with SiO 2 , [ 58 ] indicating the moisture blocking efficiency of SiO 2 may be smaller than that of Al 2 O 3 and ZrO x .…”

Section: Mechanism Discussionmentioning

confidence: 99%

“…[ 40 ] The relative MOH concentration is significantly increased to 24.24%, compared to the as‐deposited ITZO thin film. Besides, this value is higher than that of ITZO thin film with Al 2 O 3 passivation layer [ 40 ] and that of ITZO thin film with ZrO x [ 57 ] but is consistent with the data of IGZO thin film with SiO 2 , [ 58 ] indicating the moisture blocking efficiency of SiO 2 may be smaller than that of Al 2 O 3 and ZrO x . Compared with the as‐deposited ITZO thin film, the ITZO thin film with SiO 2 passivation layer experienced several additional fabrication steps and a period of storage, which would introduce extra moisture into the ITZO thin film and therefore enhance the relative MOH concentration.…”

Section: Mechanism Discussionmentioning

confidence: 99%

“…The transfer curve degradation after LT annealing with the temperature of 75, 85, and 200 °C is shown in Figure S2 (Supporting Information). Different from PBS‐induced positive shift of transfer curve in MO TFTs, [ 39,40 ] the transfer curves of ITZO TFTs negatively shift for all the LT annealing conditions. In this work, the passivation layer and gate oxide of ITZO TFTs are plasma‐enhanced chemical vapor deposition (PECVD) SiO 2 , which is usually porous and even has pinholes.…”

Section: Device Instability Characterizationmentioning

confidence: 97%

“…After examining the LT annealing effect on device characteristics, the device instability after LT annealing is evaluated under positive bias stress (PBS). Before performing the reliability test, the device transfer curves of a ITZO TFT were measured 20 times, as shown in Figure 1f Different from PBS-induced positive shift of transfer curve in MO TFTs, [39,40] the transfer curves of ITZO TFTs negatively shift for all the LT annealing conditions. In this work, the passivation layer and gate oxide of ITZO TFTs are plasma-enhanced chemical vapor deposition (PECVD) SiO 2 , which is usually porous and even has pinholes.…”

Section: Device Instability Characterizationmentioning

confidence: 99%

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Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Chen

Zhang

Deng

et al. 2022

Adv Materials Inter

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Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and temperature. An investigation on the joint effect of environmental moisture and working temperature on device characteristics and instability is becoming necessary. However, few related studies have been performed. In this work, a low‐temperature (LT) annealing in air is proposed to simulate the working conditions of TFTs in display applications. The effect of moisture exchange caused by LT annealing on device characteristics and instability of InSnZnO (ITZO) TFTs is systematically investigated. Combined with X‐ray photoelectron spectroscopy analysis, TCAD design simulation, and the measurement of relative humidity (RH) change on the device surface, a model considering water diffusion and water ionization is proposed. The negative shift of the transfer curve is attributed to the extra electrons released from the water ionization and the positive‐bias‐stress‐induced instability is mainly attributed to the generation of interstitial/substitutional hydrogens and aggregation of hydrogen ions at the backchannel. The temperature and the RH on the device surface jointly determine the moisture diffusion direction. Furthermore, the model is verified by an LT vacuum annealing. The results and the model will be beneficial for the further reliable design of ITZO TFTs in commercial applications.

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Section: Mechanism Discussionmentioning

confidence: 94%

Section: Mechanism Discussionmentioning

confidence: 99%

Section: Mechanism Discussionmentioning

confidence: 99%

Section: Device Instability Characterizationmentioning

confidence: 97%

Section: Device Instability Characterizationmentioning

confidence: 99%

See 3 more Smart Citations

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Chen

Zhang

Deng

et al. 2022

Adv Materials Inter

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Highly Reliable Implementation of Optimized Multicomponent Oxide Systems Enabled by Machine Learning‐Based Synthetic Protocol

et al. 2021

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current, good stability, and large-area scalability. [6,7] In particular, AOSs that can replace the conventional polycrystalline Si have been actively researched in displays due to the growing demands for highresolution and high-frame-rate displays. [8] To obtain high-mobility AOSs, various multicomponent oxide systems have been investigated including In-Zn-Sn-O [9] (IZTO), In-Ga-Zn-O, [10] In-Ga-Sn-O, [11] and Al-In-Zn-O [12] channels. In the case of multicomponent AOSs, electrical properties such as field-effect mobility, threshold voltage (V TH ), and on/off ratio are strongly dependent on the cation ratio. Therefore, to find the optimal cation ratio, a combinatorial study on various cation components has been typically carried out. [13,14] However, although the conventional combinatorial approaches can allow successful discovery of optimal cation ratios, rather exhaustive experimental procedures are usually required, especially when there are many different cationic components to examine. Moreover, the complicated contributions from extrinsic parameters on thin-film transistor (TFT) mobility value, such as film quality and interface effects, make the determination of optimized device challenging, even with extensive first-principle study on amorphous multicomponent semiconductors using huge computation cost. [15,16] In this regard, machine learning (ML)-based synthetic approach can be a promising solution to optimize the cation ratio by predicting the electrical properties of multicomponent AOSs with a minimal trial and error via reduced number of experimental data.As is well known, ML is a technique that predicts the results by learning the patterns of training data. For this reason, ML has been widely utilized in various applications such as speech recognition, natural language processing, and robotics control. [17] Recently, using the ML, there has been a lot of interest in revealing the complex correlation between composition, processing, structure parameters, and electrical properties of various material systems. For instance, the discovery of new ternary oxide compounds for metallic glasses [18] and batteries, [19] and parameterizing the point defects in fin field-effect transistors [20] and band gap in inorganic solids [21] have been reported. In the case of multicomponent AOSs, although the ML can be aThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smtd.202101293.

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Mist CVD deposited amorphous InSnZnO thin films with different nitrogen/oxygen ratios carrier gases and their applications to thin-film transistors

Liu¹,

Liao²,

Wu³

2022

Ceramics International

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Amorphous ITZO Thin-Film Transistors by Using Ultrasonic Spray Pyrolysis Deposition

Cited by 18 publications

References 23 publications

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Highly Reliable Implementation of Optimized Multicomponent Oxide Systems Enabled by Machine Learning‐Based Synthetic Protocol

Mist CVD deposited amorphous InSnZnO thin films with different nitrogen/oxygen ratios carrier gases and their applications to thin-film transistors

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