Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Abstract

High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer of TFT with Cu source and drain (S/D) electrodes. Under the guidance of the Taguchi orthogonal design method from Minitab software, the semiconductor characteristics were evaluated by microwave photoconductivity decay (μ-PCD) measurement. The results show that moderate oxygen concentration (~5%), low sputtering pressure (≤5 mTorr) and annealing temperature (≤300 °C) are conducive to reducing the shallow localized states of NdIZO film. The optimized annealing temperature of this device configuration is as low as 250 °C, and the contact resistance (RC) is modulated by gate voltage (VG) instead of a constant value when annealed at 300 °C. It is believed that the adjustable RC with VG is the key to keeping both high mobility and compensation of the threshold voltage (Vth). The optimal device performance was obtained at 250 °C with an Ion/Ioff ratio of 2.89 × 107, a saturation mobility (μsat) of 24.48 cm2/(V·s) and Vth of 2.32 V.

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

“…The V th is also improved, from −2.98 to 3.78 V and 8.07 V for bilayer IGZO/In 2 O 3 and In 2 O 3 /IGZO TFTs, respectively, which can be attributed to the relatively low trap density at the semiconductor/insulator interface. Here, the trap density (N it ) of the TFTs is extracted using the following equation [44]:…”

Comparative Study on the Effects of O2 Flow Rate on As-Deposited Polycrystalline IAZO Films

“…Table shows the corresponding eight conditions for the thinner films. By adjusting the sputtering time, we were able to achieve different concentrations of Al, In, and Zn in the films, which allowed us to investigate the impact of cationic percentage on the electrical properties of the oxide semiconductor films. , The purpose of depositing films at the same O 2 flow rate but with varying thicknesses was to study the electronic, electrical, structural, morphological, and RMS surface roughness properties of thicker and thinner films in order to determine the optimum channel material for TFTs. The electrical properties of each film were evaluated by using a Hall effect measurement system.…”