Amorphous pocket model based on the modified heat transport equation and local lattice collapse

Kovac, Dobroslav; Hobler, G.

doi:10.1016/j.nimb.2009.01.032

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Towards a Comprehensive Description Of Ion-implanted Damage1

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“…One possibility consists on using CMD simulations to gain insight on the physics governing the damage generation mechanisms occurring during collision cascades [61][62][63][64], and then employing this information to develop advanced but simpler damage generation models [65,66].…”

Section: Towards a Comprehensive Description Of Ion-implanted Damagementioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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