2002
DOI: 10.1088/0268-1242/17/3/316
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Amorphous selenium thin films prepared using chemical bath deposition: optimization of the deposition process and characterization

Abstract: Amorphous selenium films were prepared at room temperature using the simple and safe method of chemical bath deposition. This was achieved with an acidified solution of Na 2 SeSO 3 at a pH value of 4.5. In order to confirm the formation of amorphous selenium (a-Se), samples were characterized using x-ray diffraction, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy and optical absorption studies. The optical bandgap of the material was found to be 2.09 eV. Indium selenide could be prepared by … Show more

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Cited by 33 publications
(26 citation statements)
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“…9a). In support of our voltammetry and coulometry experiments, the literature indicates that this absorbance is consistent with the formation of an electronically insulating Se 0 phase [60]. By comparison, film deposition from a 0.1 F peroxo-polymolybdate solution displays a broad absorbance over the entire visible-NIR region of interest (400-1000 nm).…”
Section: Spectroelectrochemistrysupporting
confidence: 87%
“…9a). In support of our voltammetry and coulometry experiments, the literature indicates that this absorbance is consistent with the formation of an electronically insulating Se 0 phase [60]. By comparison, film deposition from a 0.1 F peroxo-polymolybdate solution displays a broad absorbance over the entire visible-NIR region of interest (400-1000 nm).…”
Section: Spectroelectrochemistrysupporting
confidence: 87%
“…16 Over this, In was deposited using resistive heating, at a pressure of ϳ2 ϫ 10 −5 mbar. Thin films of selenium with a thickness of 200 nm ͓measured using stylus thickness profiler ͑Model-Dektak 6M͔͒ were deposited on the glass substrate using chemical bath deposition technique.…”
Section: Methodsmentioning
confidence: 99%
“…23 The as-prepared Se-ZnS films are amorphous in accordance with previous reports. [1][2][3]21 Figure 1 shows the XRD patterns recorded at grazing incidence of = 1.5 ‫ؠ‬ for Se-ZnS thin films annealed under different conditions. Figure 1a shows the pattern for hexagonal-phase Se ͑PDF-73-0465; a = 4.3662 Å, c = 4.9536 Å͒, and Fig.…”
Section: Resultsmentioning
confidence: 99%