Selenium thin films of thickness ϳ300 nm were deposited from a solution of sodium selenosulfate of pH 4.5. These films are amorphous, but they are crystalline and photoconductive through annealing for 15 min at 150-200 ؠ C. In this paper we present the properties of these films and their use as a planar source of selenium vapor ͑1.7 ϫ 10 −6 mol/cm 2 of the film͒ to react with metal films to form metal selenide layers. For this, metal films of Ag, Sn, In, Cu, Sb, etc., deposited by thermal evaporation, are kept in contact with the Se-thin film and are heated at temperatures typically Ͻ350 ؠ C in nitrogen. This process leads to the formation of thin films of Ag 2 Se, SnSe 2 , In 2 Se 3 , CuSe/Cu 2−x Se, Sb 2 Se 3 , etc. Se-metal reaction also takes place under microwave heating. In the case of an evaporated Ag film on a chemically deposited thin film of Sb 2 S 3 , AgSbSe 2 is produced through heating at 200-300 ؠ C. Photovoltaic structures SnO 2 :F-CdS-Sb 2 S 3 -AgSbSe 2 fabricated this way show open-circuit voltage Ͼ500 mV and short-circuit current density of 2-5 mA/cm 2 .