Amorphous silicon 3‐D one‐transistor active pixel sensor enabling large area imaging

Qi, Yihong; Li, Anqi; Xu, Yitong; Wang, Kai

doi:10.1002/jsid.1073

Cited by 3 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Amorphous InZnO thin-film-transistors (IZO TFTs) have shown great potential to apply in flexible integrated circuits (ICs) for their low preparation temperature, reasonable electrical properties and high flexibility [1], [2]. Nevertheless, the low frequency noise (LFN) in these devices limits the functionality of the analog and even digital ICs [3].…”

Section: Introductionmentioning

confidence: 99%

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Chen,

Liu,

Lei

et al. 2024

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the ∆N model in devices with SiO2-SiNx layers, and by the ∆N-∆µ model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge's parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.

show abstract

Section: Introductionmentioning

confidence: 99%

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Chen,

Liu,

Lei

et al. 2024

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

show abstract

Thin-film transistors for large-area electronics

Geng,

Wang,

et al. 2023

Nat Electron

View full text Add to dashboard Cite

Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K

Chen,

Liu,

Liu

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and the temperature dependence of channel resistances (Rch) and contact resistances (Rsd) is also analyzed. The carrier transport transition both occurs in a-IZO channels at 80 K and in ITO/Mo electrodes at 100 K, which causes the variation in Rsd and Rch. Below 80 K, the variable range hopping conduction dominates in the channels and contacts with Rsd/Rch ratio > 1. The LFN measured results indicate that the noise is contact-dominated. At higher temperatures above 120 K, the band conduction dominates in the channel, with Rsd/Rch ratio < 1, and the noise is channel-dominated. The main mechanism of noise transfers from the mobility fluctuation to the carrier number fluctuation. We consider that the contribution of contact noise to total LFN is determined by the Rsd/Rch ratio. This work provides comments for the selection of electrode materials in devices applied to cryogenic integration circuits.

show abstract

Amorphous silicon 3‐D one‐transistor active pixel sensor enabling large area imaging

Cited by 3 publications

References 14 publications

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Thin-film transistors for large-area electronics

Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K

Contact Info

Product

Resources

About