Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics

Cocorullo, G.; Corte, Francesco G. Della; Rosa, R. De; Rendina, Ivo; Rubino, Alfredo; Terzini, E.

doi:10.1109/2944.736096

Cited by 81 publications

(36 citation statements)

References 20 publications

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“…Another alternative is low-loss hydrogenated amorphous silicon. 13 To determine the tuning voltage, we note that the continuity of the externally applied electric field implies that…”

Section: Device Designmentioning

confidence: 99%

High-speed polymer/silicon on insulator ring resonator switch

2008

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We design a high-speed tunable electro-optical ͑EO͒ polymer-clad silicon over insulator ͑SOI͒ racetrack resonator with a 80-m length and 5-m radius that exhibits a switching speed of 100 GHz, a tuning voltage of 6.81 V, and an extinction ratio of 109.55 dB. This work employs high electro-optical coefficient polymers ͑r 33 = 1000 pm/ V͒, which are currently under development, to implement very high speed switches.

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“…Another alternative is low-loss hydrogenated amorphous silicon. 13 To determine the tuning voltage, we note that the continuity of the externally applied electric field implies that…”

Section: Device Designmentioning

confidence: 99%

High-speed polymer/silicon on insulator ring resonator switch

2008

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“…For this reason, it may be preferable to fabricate photonic circuits after the CMOS logic layer fabrication method: the so-called "back-end process". Hydrogenated amorphous silicon (a-Si:H) and SiN are core materials of Si photonics with CMOS back-end process compatibility and lowtemperature fabrication 12,13 . In particular, a-Si:H has the advantage of a high refractive index that is essential for nanophotonic devices.…”

Section: Introductionmentioning

confidence: 99%

Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects

et al. 2013

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The relationship between the propagation loss and roughness on multi-layered Si waveguides fabricated up to a 3 rd layer was investigated. By reducing the surface and sidewall roughness of the waveguides, a low propagation loss of 3.7 dB/cm for the 3 layer a-Si:H waveguides was demonstrated. Furthermore, vertical coupling between multilayer waveguides was demonstrated by use of a grating-type vertical coupler. A coupling efficiency of 22% was obtained for 10 pairs of gratings with a period of 640 nm, even with a layer distance of 1µm.

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“…The device speed is limited by the thermal transients. The small capacitance associated to the device dimensions (C~ev = 4.98 10-sJ x K -~) allows to predict operation close to 1 kHz [ 1 ] II. ALL-OPTICAL MICROMODULATOR…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Total Internal Reflection (TIR) can be activated or dropped into the device thanks to the different thermo-optic coefficients in a-Si:H and c-Si. The current deposition technologies allow in fact to obtain c-Si and a-Si:H with the same refractive index n at a given temperature [1]. Then, optical switching can be induced by a thermal control of the n discontinuity at the TIR interface.…”

Section: A Basic Structure and Principle Of Operationmentioning

confidence: 99%

“…This can simply indicate a geometrical effect due to the effective core volume involved in the photoinduced phenomena. M is related to the waveguide loss variations Aczwg,iR [cm -1] by: M = 1 -e -LA(zwg'IR (1) where L is the length of illuminated region along the IR transmission direction. Then, we determined Ac~wg,iR from the experimental M data, by simulating the optical propagation along the waveguides, by means of the TempSelene software [5].…”

Section: B Characterizationmentioning

confidence: 99%

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