Amorphous silicon-based superlattices

Agarwal, S. C.

doi:10.1007/bf02744620

Cited by 5 publications

(5 citation statements)

References 57 publications

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“…This method has been illustrated here with the examples of a-Si/c-Si superlattices and core-shell nanowires. The method has been shown to produce atomically sharp and defect free interfaces, in accordance with experimental observations [13]. The quality of the interfaces synthesized has been also assessed by the evaluation of the interfacial energy, which turns out to be in good agreement with experimental measurements.…”

Section: Discussionsupporting

confidence: 72%

“…Figure 4 illustrates the construction of a crystalline/ amorphous Si superlattice where the relaxed super-cells are very well approximated by parallelepipeds. We will now check that the final structures correspond to atomically sharp interfaces free of large scale defects as has been suggested in experimental characterization of a-Si/c-Si devices [13].…”

Section: Superlatticesmentioning

confidence: 85%

“…The latter are primarily governed by the phonon transmission at the interface between a-Si and c-Si, which strongly depends on the generation of the interfaces, the presence of interfacial defects and possibly on the energy barrier between crystalline and amorphous Si. As mentioned before, a variety of interface structures could be produced in different experimental situations, and we focus our attention here on atomically sharp and defect free interfaces because they are reported by Agarwal et al in the characterization of a-Si/c-Si nanostructures obtained by chemical vapour deposition [13]. The obtained structures are also tested via their interfacial energies which have been investigated in previous theoretical [7] and experimental works [14].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomistic amorphous/crystalline interface modelling for superlattices and core/shell nanowires

France‐Lanord¹,

Blandre²,

Albaret³

et al. 2014

J. Phys.: Condens. Matter

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In this paper we present a systematic and well controlled procedure for building atomistic amorphous/crystalline interfaces in silicon, dedicated to the molecular dynamics simulations of superlattices and core/shell nanowires. The obtained structures depend on the technique used to generate the amorphous phase and their overall quality is estimated through comparisons with structural information and interfacial energies available from experimental and theoretical results. While most of the related studies focus on a single planar interface, we consider here both the generation of multiple superlattice planar interfaces and core/shell nanowire structures. The proposed method provides periodic homogeneous and reproducible, atomically sharp and defect free interface configurations at low temperature and pressure. We also illustrate how the method may be used to predict the thermal transport properties of composite crystalline/amorphous superlattices.

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Section: Discussionsupporting

confidence: 72%

Section: Superlatticesmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

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Atomistic amorphous/crystalline interface modelling for superlattices and core/shell nanowires

France‐Lanord¹,

Blandre²,

Albaret³

et al. 2014

J. Phys.: Condens. Matter

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“…The resistance is definedhere through the temperature drop T int at the interface observed in a NEMD simulation. At this point we want to mention that we focused our attention only to atomically sharp and defect free amorphous/crystalline interfaces, as such interfaces are reported experimentally by Agarwal et al [29]. For smooth interfaces, the interfacial area is the same as the cross-section of our slab.…”

Section: Kapitza Resistancementioning

confidence: 99%

Thermal properties of amorphous/crystalline silicon superlattices

France‐Lanord

Mérabia

Albaret

et al. 2014

J. Phys.: Condens. Matter

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Thermal transport properties of crystalline/amorphous silicon superlattices using molecular dynamics are investigated. We show that the cross-plane conductivity of the superlattices is very low and close to the conductivity of bulk amorphous silicon even for amorphous layers as thin as ≃ 6 Å. The cross-plane thermal conductivity weakly increases with temperature which is associated with a decrease of the Kapitza resistance with temperature at the crystalline/amorphous interface. This property is further investigated considering the spatial analysis of the phonon density of states in domains close to the interface. Interestingly, the crystalline/amorphous superlattices are shown to display large thermal anisotropy, according to the characteristic sizes of elaborated structures. These last results suggest that the thermal conductivity of crystalline/amorphous superlattices can be phonon engineered, providing new directions for nanostructured thermoelectrics and anisotropic materials in thermal transport.

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“…The three-layered groups of atoms, called a minimal sandwich, are piled one on the other in the c-direction. The most commonly observed structures in CdI 2 and PbI 2 are the hexagonal 4H (AγB) (CαB) and 2H (AγB), respectively, where A, B and C represent the positions of the iodine atoms and the Greek letters denote cadmium/lead ions [108]. A sandwich layer can be described by a set of close-packed layers I/Cd/I.…”

Section: Solid Phase Transformationsmentioning

confidence: 99%