Amorphous silicon bibliography update introduction

Mahan, A.H.; Stone, Jack L.

doi:10.1016/0379-6787(83)90083-2

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Open-circuit Photovoltage Measurements To Probe Interface Ki...1

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1984

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“…While the Vo, values do seem to level off at very positive potentials, photoanodic decomposition processes prevented further variation in the solution potential. For A-acetyl ferrocene, the Vo, of 0.88-0.91V at light levels equivalent to 6-7 mA/cm 2 photocurrent densities for A = acetylferrocene are among the highest values of Vo~ reported for any a-Si:H surface barrier device (17,19,31).…”

Section: Open-circuit Photovoltage Measurements To Probe Interface Ki...mentioning

confidence: 92%

Correlation of the Photoelectrochemistry of the Amorphous Hydrogenated Silicon/Methanol Interface with Bulk Semiconductor Properties

Gronet

Lewis

Cogan³

et al. 1984

J. Electrochem. Soc.

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Semiconductor/liquid junctions derived from 0.5 ~m thick films of amorphous hydrogenated silicon, a-Si:H, have ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-06-30 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-06-30 to IP Vol. 131, No. 12 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-06-30 to IP

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Section: Open-circuit Photovoltage Measurements To Probe Interface Ki...mentioning

confidence: 92%