Amorphous silicon carbide thin films doped with P or B for the photoelectrochemical water splitting devices

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

“…Common dopants for a-SiC films are nitrogen (from NH 3 ) [ 103 ], phosphorus (from PH 3 ), or boron (from B 2 H 6 ) [ 74 , 112 ]. By adding a flow of a dopant precursor with proportions of up to 10% of the combined silane and methane precursor flow rates, resistivity decreases by approximately two orders of magnitude.…”

“…Common dopants for a-SiC films are nitrogen (from NH3) [103], phosphorus (from PH3), or boron (from B2H6) [74,112]. By adding a flow of a dopant precursor with proportions of up to 10% of the combined silane and methane precursor flow rates, resistivity Prolonged studies of electrical isolation over time find that the use of lower deposition temperatures (200 • C vs. 350 • C) gives higher resistivity when measured immediately, but exhibit a higher rate of eventual failure in thin films due to leakage currents through micropores in the film [60].…”