Amorphous silicon–carbon based thin films with efficient ultraviolet-excited photoluminescence and low self-absorptivity in the emission spectral range

Rüter, D.; Rolf, S.; Bauhofer, W.

doi:10.1063/1.114649

Cited by 14 publications

(7 citation statements)

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“…Plasma-polymerized organosilicone thin films have good optical and mechanical properties [2][3][4][5][6][7][8][9][10], which make them attractive candidates in many fields of applications such as scratch resistance coatings [5], humidity and chemical sensors [6,7], optical filters [8], protective coatings [9] and chemical barrier coatings [10]. Moreover, they seem to be very promising as silicon-based luminescent materials for optoelectronic devices [11]. It has been demonstrated that thin films deposited from hexamethyldisiloxane (HMDSO) or hexamethyldisilazane (HMDSN) combine the properties of efficient luminescence at room temperature and low absorptivity of the PL light [11].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, they seem to be very promising as silicon-based luminescent materials for optoelectronic devices [11]. It has been demonstrated that thin films deposited from hexamethyldisiloxane (HMDSO) or hexamethyldisilazane (HMDSN) combine the properties of efficient luminescence at room temperature and low absorptivity of the PL light [11]. However, in contrast to other silicon-based luminescent materials, such as amorphous silicon, amorphous carbon and amorphous silicon-carbon alloys, little work has been devoted to the study of the PL properties of plasma-polymerized organosilicone films.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Naddaf¹,

Saloum²,

Hamadeh³

2007

J. Phys. D: Appl. Phys.

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Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure–low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 °C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad ‘green/yellow’ PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The ‘green/yellow’ PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si–O–H groups.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Naddaf¹,

Saloum²,

Hamadeh³

2007

J. Phys. D: Appl. Phys.

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“…Different authors explored the PL from similar films. Rüter et al [21] prepared luminescent waveguiding layer structures, in the spectral range of the luminescence emission (400-550 nm), on the bases of amorphous silicon-carbon based thin films deposited in a microwave plasma reactor, using organosilane vapors from liquid sources such as HMDSN. Seekamp et al [22] investigated the PL properties of plasma deposited films from liquid organosilicone precursors such as HMDS and HMDSN, where they found that the PL maximum varies between 490 nm and 410 nm, and attributed this PL to the existence of different chemical structures in the precursor such as Si-(CH 3 ) 2 , Si-(CH 3 ) 3 and Si-CH 2 -Si.…”

Section: Photoluminescence Propertiesmentioning

confidence: 99%

Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

Saloum

Alkhaled

2011

Acta Phys. Pol. A

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Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N 2 /HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported.

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“…Various materials can be used for the fabrication of these detectors, such as SiC [1], Al x Ga 1--x N [2,3], diamond [4], Si or GaAs Schottky photodiodes with additional visible-cut off filter [5], amorphous SiCbased films [6], and NaCl : Eu 2+ and KCl 1--x Br x : Eu 2+ crystals [7,8].…”

Section: Introductionmentioning

confidence: 99%

Selective UV Detector as a Combination of Waveguide Structures of Eu3+-Doped Zinc Borate Glasses with Si Photodiode

Ivankov

Bauhofer

2001

phys. stat. sol. (a)

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Subject classification: 78.20.Ci; 78.55.Hx; S10.15 Selective, low cost ultraviolet detectors with a sensitivity of up to 3 mA/W in the UVC energy range were fabricated by means of Eu 3+ -doped zinc borate glass (ZBG) fibers and Si-photodiodes. Europium-doped ZBG shows highly efficient emission (613 nm) from Eu 3+ by irradiation with high-energy UV light. The Eu 3+ -doped ZBG fiber converts the incoming UV light into visible light of 613 nm and guides it to a silicon photodiode. Eu 3+ -doped ZBG fibers Zn x B 1--x O 1.5--0.5x of varying composition (x = 0.33-0.52) were produced by the melt spinning method from glass melt in air atmosphere. The fibers were then connected to the silicon photodiode surface. The wavelength of maximum sensitivity of our detector is in the far ultraviolet and can be varied between 240 and 270 nm by changing the Zn content in the glass matrix.

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Amorphous silicon–carbon based thin films with efficient ultraviolet-excited photoluminescence and low self-absorptivity in the emission spectral range

Abstract: Articles you may be interested inDiagnostics of the early phase of an ultraviolet laser induced plasma by spectral line analysis considering selfabsorption J.

Cited by 14 publications

References 14 publications

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

Selective UV Detector as a Combination of Waveguide Structures of Eu3+-Doped Zinc Borate Glasses with Si Photodiode

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