Amorphous silicon-lithium niobate thin film strip-loaded waveguides

Wang, Yiwen; Chen, Zhihua; Cai, L. Z.; Jiang, Yunpeng; Zhu, Houbin; Hu, Hui

doi:10.1364/ome.7.004018

Cited by 41 publications

(23 citation statements)

References 46 publications

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“…Recently the crystal-ion-sliced (CIS) thin-film LiNbO 3 on insulator (LNOI) platform has excited a lot of attention due to its superior advantages, such as tight optical mode confinement, high EO modulation efficiency, linear voltage-index relationship, ultrawide operational bandwidth, low drive power, high extinction ratio, and small bending radii [16][17][18][19][28][29][30]. Both standalone and hybrid LiNbO 3 platforms (e.g., Si-LiNbO 3 , Si 3 N 4 -LiNbO 3 ) [28][29][30][31][32][33] are very active in the related research fields. While most recent work has successfully demonstrated a low optical loss in standalone LiNbO 3 by the plasma-etching method [13,14] to form waveguide guiding, the hybrid platform still remains as an open research field owning its potential hybrid integration with the CMOScompatible manufacturing process and driving circuitry.…”

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confidence: 99%

“…Microring devices based on the Si 3 N 4 -LiNbO 3 material have yet to be studied. Si 3 N 4 -LiNbO 3 comes forward as a promising material system due to better index matching, high mode confinement inside LiNbO 3 [32][33][34], the ultralow propagation loss of Si 3 N 4 , high power handling capabilities, Si 3 N 4 insulating properties, and a wide optical transparency window [35]. Previous Si 3 N 4 -LiNbO 3 -based work focuses primarily on passive devices with vertical mode transition structures from Si 3 N 4 to LiNbO 3 material [32,33] and push-pull Mach-Zehnder interferometer (MZI) modulation [34].…”

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confidence: 99%

“…Si 3 N 4 -LiNbO 3 comes forward as a promising material system due to better index matching, high mode confinement inside LiNbO 3 [32][33][34], the ultralow propagation loss of Si 3 N 4 , high power handling capabilities, Si 3 N 4 insulating properties, and a wide optical transparency window [35]. Previous Si 3 N 4 -LiNbO 3 -based work focuses primarily on passive devices with vertical mode transition structures from Si 3 N 4 to LiNbO 3 material [32,33] and push-pull Mach-Zehnder interferometer (MZI) modulation [34]. Furthermore, most of the prior hybrid material systems were realized by bonding LNOI onto the strip-loaded waveguide structure [18,28,[31][32][33], which is challenging due to reliability, fabrication, and design complexity (handle removal), and electrode fabrication process.…”

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confidence: 99%

“…Previous Si 3 N 4 -LiNbO 3 -based work focuses primarily on passive devices with vertical mode transition structures from Si 3 N 4 to LiNbO 3 material [32,33] and push-pull Mach-Zehnder interferometer (MZI) modulation [34]. Furthermore, most of the prior hybrid material systems were realized by bonding LNOI onto the strip-loaded waveguide structure [18,28,[31][32][33], which is challenging due to reliability, fabrication, and design complexity (handle removal), and electrode fabrication process.…”

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confidence: 99%

“…The optimal device dimensions are chosen such that the optical mode is mostly confined in the LiNbO 3 and to ensure minimum bending loss. The complete mode confinement factor map in the LiNbO 3 (Γ LN ) was studied in a previous work [33] using Lumerical software modules. The mode confinement factor in the LiNbO 3 is ∼65% for the above-mentioned structure.…”

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Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

et al. 2019

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This Letter presents, to the best of our knowledge, the first hybrid Si 3 N 4 -LiNbO 3 -based tunable microring resonator where the waveguide is formed by loading a Si 3 N 4 strip on an electro-optic (EO) material of X -cut thin-film LiNbO 3 . The developed hybrid Si 3 N 4 -LiNbO 3 microring exhibits a high intrinsic quality factor of 1.85 × 10 5 , with a ring propagation loss of 0.32 dB/cm, resulting in a spectral linewidth of 13 pm, and a resonance extinction ratio of ∼27 dB within the optical C-band for the transverse electric mode. Using the EO effect of LiNbO 3 , a 1.78 pm/V resonance tunability near 1550 nm wavelength is demonstrated.

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Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

et al. 2019

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Mid‐Infrared Silicon‐on‐Lithium‐Niobate Electro‐Optic Modulators Toward Integrated Spectroscopic Sensing Systems

Ren

Dong

et al. 2022

Advanced Optical Materials

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their label-free and nondestructive analysis capabilities benefit from unique characteristic spectra of molecules under test. [1][2][3][4] Tremendous efforts have been made in free-space MIR spectroscopy for applications ranging from personal healthcare to environmental monitoring. [5][6][7][8][9][10] Toward future miniaturized chip-scale sensing systems, nanophotonic waveguide platforms provide an attractive approach for costeffective dense integration. [11,12] In the past decades, silicon photonics becomes a viable solution to miniaturize optical systems due to its compatibility with the mature complementary-metal-oxide-semiconductor fabrication infrastructure. [13][14][15][16] Despite the conventional silicon-on-insulator (SOI) platform has been widely adopted in the near-infrared (NIR) telecommunication band, the presence of the buried oxide (BOX) limits its effectiveness in MIR photonics due to the severe absorption issue. In addition to transparency considerations, the optical properties of intrinsic silicon (Si) might be incapable of simultaneously providing all the functionalities desired for photonic integrated circuits (PICs) such as on-chip light modulation and nonlinear optics application [17] due to the centrosymmetric crystal structure. Especially, optical phase shifters are important for phased array beam-steering in free-space communication, light detection and ranging (LIDAR) applications, [18,19] on-chip Fourier transform infrared (FTIR) spectrometers, [20,21] and photonic neural network. [22] State-ofthe-art Si modulators mainly realize phase modulation through the plasma dispersion effect of free carriers in doped Si. [23][24][25] While relatively efficient, these devices suffer from considerable insertion loss and spurious amplitude modulation. The concurrent modulation of real and imaginary part of the refractive index becomes a major restriction when proliferating them in a coherent photonic network in which adjustments of purely optical phase are required. Phase shifting has been also achieved through the thermo-optic effect in Si, but they are inherently slow and constrained by stringent tradeoffs between modulation speed and power dissipation. [26,27] Alternately, by building mature Si photonic devices on MIR-transparent materials with strong Pockels effect (otherwise known as the linear electrooptic effect), phase modulation can be also performed in a lowloss, high compact, and high energy-efficient manner. Mid-infrared spectroscopy is an emerging technique in various applicationssuch as molecule identification and label-free chemical sensing. Integrated photonic platforms have a promising potential to perform miniaturized spectroscopic sensing with the advantage of compact footprint, low cost, and low power consumption. As an essential building block for integrated photonics, on-chip phase shifter plays an important role in mid-infrared spectroscopic systems, enabling signal processing and spectrum analysis. However, the implementation of effective pure phase modulation in mid-infrared...

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A Theoretical Study on Rib‐Type Photonic Wires Based on LiNbO₃ Thin Film on Insulator

Shao

Piao

et al. 2019

Advcd Theory and Sims

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A theoretical study on rib-type photonic wires (PW) based on lithium niobate (LiNbO 3 )-on-insulator (LNOI) using finite element method is performed. Aiming at 1.55 µm wavelength, effective refractive indices of several lower-order transverse-electric/magnetic (TE/TM) modes in the central rib region and the fundamental mode in the slab waveguide in the side region are calculated as a function of geometric parameters of the PW. By comparing effective refractive index of the first-order mode in the central rib region with that of the fundamental mode in the slab waveguide, single-mode condition in the central rib region is determined in terms of geometric parameters of the PW. Electric field distributions of fundamental TE and TM modes are also simulated and discussed. In addition, dispersion relation of effective group refractive index of the fundamental mode in the central rib region is calculated and discussed in comparison with those of ridge-type LNOI PW, traditional Ti-diffused LiNbO 3 strip waveguide, and bulk LiNbO 3 single-crystal. For a fundamental TE mode in a rib-type LNOI PW with a LiNbO 3 film thickness 700 nm, a rib width 1 µm and an etching depth 100-200 nm, nearly zero group index dispersion in the wavelength range 1.31.7 µm can be realized.

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Amorphous silicon-lithium niobate thin film strip-loaded waveguides

Cited by 41 publications

References 46 publications

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

Mid‐Infrared Silicon‐on‐Lithium‐Niobate Electro‐Optic Modulators Toward Integrated Spectroscopic Sensing Systems

A Theoretical Study on Rib‐Type Photonic Wires Based on LiNbO₃ Thin Film on Insulator

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Amorphous silicon-lithium niobate thin film strip-loaded waveguides

Cited by 41 publications

References 46 publications

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

Mid‐Infrared Silicon‐on‐Lithium‐Niobate Electro‐Optic Modulators Toward Integrated Spectroscopic Sensing Systems

A Theoretical Study on Rib‐Type Photonic Wires Based on LiNbO3 Thin Film on Insulator

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A Theoretical Study on Rib‐Type Photonic Wires Based on LiNbO₃ Thin Film on Insulator