Amorphous silicon memory arrays

Jackson, Warren B.; Elder, Richard; Hamburgen, William R.; Jeans, Albert; Kim, H.-J.; Luo, Hao; Mei, Ping; Perlov, Craig; Taussig, Carl; Branz, Howard M.; Stradin, P.; Wang, Q.; Ward, Scott; Braymen, S.; Jeffery, F.R.

doi:10.1016/j.jnoncrysol.2005.11.139

Cited by 4 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These can be metal-insulator-metal structures [45,46] as well as the application in stacked metals [47]. Furthermore, very thin and stiff cover layers (also for use in STM) may be formed with these films.…”

Section: Resultsmentioning

confidence: 99%

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Stella

Bürstel

Franzka

et al. 2009

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Large area (A = 6 cm 2), thin tantalum films (5 nm < d < 100 nm) are accomplished by evaporation from tantalum rods using small pocket e-beam evaporators. Using a sample to source distance of ≈20 cm, homogeneous amorphous films with a small surface roughness (<1 nm) can be prepared on glass. Films are characterized by scanning electron microscope images, atomic force microscopy, electrochemical oxidation and resistivity measurements as a function of film thickness. The samples show high resistivities of 200-2000 µ cm. The temperature coefficient of the resistivity (TCR) is negative, as characteristic for highly disordered metals. A theoretical description of the thickness distribution (evaporation from plane and hemispherical sources on plane targets) is given in the appendix.

show abstract

Section: Resultsmentioning

confidence: 99%

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Stella

Bürstel

Franzka

et al. 2009

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Flexible electronics refers to the technology that integrates electronic devices on flexible substrates. It can be implemented using flexible active materials such as amorphous silicon and organic semiconductors, conventionally. − However, due to the fundamental limits on material properties, mainly carrier mobility and material stability, these materials cannot offer promises for high-performance flexible electronics. − In contrast, synthetic inorganic semiconductor nanowires (NWs) are highly flexible due to submicrometer diameters, − and they have been fabricated into an assortment of electronic devices demonstrating carrier mobility up to 21 000 cm 2 /(V·s), ,,− and device oscillation frequency higher than 20 GHz . In addition, the synthetic semiconductor NWs are typically grown with bottom-up chemical approaches with high-throughput and tailorable material properties such as shape, size, atomic composition, and doping concentration. − Thus they are extremely attractive for large-scale printable electronics with requirements on performance.…”

Section: Vocabularymentioning

confidence: 99%

Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

et al. 2012

View full text Add to dashboard Cite

High-performance flexible electronics has attracted much attention in recent years due to potential applications in flexible displays, artificial skin, radio frequency identification, sensor tapes, etc. Various materials such as organic and inorganic semiconductor nanowires, carbon nanotubes, graphene, etc. have been explored as the active semiconductor components for flexible devices. Among them, inorganic semiconductor nanowires are considered as highly promising materials due to their relatively high carrier mobility, reliable control on geometry and electronic properties, and cost-effective synthesis processes. In this review, recent progress on the assembly of high-performance inorganic semiconductor nanowires and their applications for large-scale flexible electronics will be summarized. In particular, nanowire-based integrated circuitry and high-frequency electronics will be highlighted.

show abstract

“…Technological improvements solve registration issues during manufacturing with imprint technology. 9,10 In spite of this, further advances are needed to make imprinting commercially viable. Direct laser writing is yet another patterning technology suitable to make micron-sized pattern but throughput time is still a tough challenge.…”

Section: Introductionmentioning

confidence: 99%

FABRICATION OF FLEXIBLE FIELD-EFFECT TRANSISTORS ON 25 μm PEN FOIL

Furthner

Makk

Putten

et al. 2011

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

The development of high performance thin-film transistors on flexible plastic substrates is of great importance for the manufacturing and industrialization of flexible electronic devices, such as flexible displays. Here we present different approaches to fabricate bottom-gate field-effect transistors on 25 µm heat stabilized polyethylene naphthalate (PEN) foil using photolithography and solution processing. The flexibility and dimensional instability of the substrate constituted the main challenge during manufacturing. We developed a novel method to handle the foils during processing by reversibly attaching them onto 6 inch Si wafers. The so-called foil-on-carrier assembly showed excellent flatness (about 1 µm) and good dimensional stability and tolerance towards the different processing steps up to 160°C. Transistors were made either using an organic polymer or an inorganic oxide as gate dielectric material. Source and drain gold electrodes were patterned using standard photoresist patterning followed by wet etching, or by lift-off. The feature sizes in the transistors were downsized from 5 µm to sub-micrometer to improve the performance. In order to achieve structures with high resolution, all functional layers were patterned using a commercial wafer stepper (PAS5500/100D). The two dielectric materials used and the two ways of making the source-drain resulted in four different metal-insulator-metal (MIM) stacks. The MIM stacks were characterized by optical microscopy, scanning electron microscopy and four point resistance measurements. Registration accuracies below 0.5 µm were found over the whole wafer. Transistor fabrication was finished by depositing pentacene derivatives from solution.

show abstract

Amorphous silicon memory arrays

Cited by 4 publications

References 3 publications

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Preparation and properties of thin amorphous tantalum films formed by small e-beam evaporators

Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics

FABRICATION OF FLEXIBLE FIELD-EFFECT TRANSISTORS ON 25 μm PEN FOIL

Contact Info

Product

Resources

About