Amorphous silicon position sensitive neutron detector

Mireshghi, A.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Wildermuth, D.

doi:10.1109/nssmic.1991.258922

Cited by 7 publications

(26 citation statements)

References 8 publications

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“…Our experimental set up for measuring neutron detection efficiency is described elsewhere [7]. The neutron source is a 70 Ci Pu-Be which is used in a water tank to produce thermal neutrons.…”

Section: Measurementmentioning

confidence: 99%

“…In our pervious work [7] we proposed a low cost, high resolution, iarge area position sensitive neutron detector based on hydrogenated amorphous silicon (a-Si:H). Despite its poorer electronic characteristics compared to crystalline silicon, a-Si:H offers strong advantages of availability in large area and much higher radiation resistance (8].…”

Section: Introductionmentioning

confidence: 99%

“…Despite its poorer electronic characteristics compared to crystalline silicon, a-Si:H offers strong advantages of availability in large area and much higher radiation resistance (8]. This material has been successfully used as detector for X-rays, gamma rays, charged particles and neutrons [9,7]. For neutron detection we interfaced amorphous silicon n-i-p diodes with Gd converters.…”

Section: Introductionmentioning

confidence: 99%

“…For neutron detection we interfaced amorphous silicon n-i-p diodes with Gd converters. Gadolinium even in its natural composition has a large thermal neutron absorption cross section ( -46000 barns) and facilitates achievement of much higher neutron detection efficiencies than possible with other converters such as: lOB and 6u [7]. It is more suitably used in its metallic form rather than its scintillator compounds i.e.…”

Section: Introductionmentioning

confidence: 99%

“…It is more suitably used in its metallic form rather than its scintillator compounds i.e. gadolinium oxisulfate (Gd202S), because, a) it is not gamma sensitive, and b) the signal size produced by neutron capture in the Gd202S scintillator is about 2000 electrons, which is far less than the average signal size from Gd metal on a-Si:H diode [7].…”

Section: Introductionmentioning

confidence: 99%

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High efficiency neutron sensitive amorphous silicon pixel detectors

Mireshghi

Cho

Drewery

et al. 1994

IEEE Trans. Nucl. Sci.

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Section: Measurementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

High efficiency neutron sensitive amorphous silicon pixel detectors

Mireshghi

Cho

Drewery

et al. 1994

IEEE Trans. Nucl. Sci.

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Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons

Pfeifer

Achyuthan

Allen

et al. 2017

Journal of Radiation Research

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Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here the microfabrication of gadolinium (Gd) conversion material–based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation–induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and Kα,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.

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A Handheld Neutron-Detection Sensor System Utilizing a New Class of Boron Carbide Diode

Osberg¹,

Schemm

Balkir

et al. 2006

IEEE Sensors J.

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Abstract-A handheld neutron-detection sensor application is described in this paper. The sensor system utilizes a new class of boron carbide diode that interacts with incoming neutrons. To interface with the boron carbide diode, an integrated front end is designed in a 1.5-µm standard CMOS technology. With the diode and front-end microchip, a handheld neutron-detection system was realized with an embedded microcontroller for real-time processing. The handheld detector operation was then tested with a plutonium-beryllium neutron source. Test and measurement results confirm the validity of the approach and the functionality of the design.Index Terms-Boron carbide, charge-sensitive amplifier, heteroisomeric diode, neutron detection.

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Amorphous silicon position sensitive neutron detector

Cited by 7 publications

References 8 publications

High efficiency neutron sensitive amorphous silicon pixel detectors

High efficiency neutron sensitive amorphous silicon pixel detectors

Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons

A Handheld Neutron-Detection Sensor System Utilizing a New Class of Boron Carbide Diode

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