Thin films of amorphous (a)-TiO 2 are ubiquitous as photocatalysts, protective coatings, photo-anodes, and in memory applications, where they are exposed to excess electrons and holes. We investigate trapping of excess electrons and holes in the bulk of pure amorphous titanium dioxide, a-TiO 2 , using hybrid density-functional theory (h-DFT) calculations. Fifty 270-atom a-TiO 2 structures were produced using classical molecular dynamics and their geometries fully optimized using h-DFT simulations. They have the density, distribution of atomic coordination numbers, and radial pair-distribution functions in agreement with experiments. The calculated average a-TiO 2 band gap is 3.25 eV with no states splitting into the band gap. Trapping of excess electrons and holes in a-TiO 2 is predicted at precursor sites, such as elongated Ti-O bonds. Single electron and hole polarons have average trapping energies (E T) of −0.4 eV and −0.8 eV, respectively. We also identify several types of electron and hole bipolaron states and discuss their stability. These results can be used for understanding the mechanisms of photo-catalysis and improving the performance of electronic devices employing a-TiO 2 films.