Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording

Svoboda, Roman; Karabyn, Vasyl; Málek, Jiřı́; Frumar, M.; Beneš, Ludvı́k; Vlček, M.

doi:10.1016/j.jallcom.2016.03.019

Cited by 18 publications

(7 citation statements)

References 50 publications

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“…The calculated according to (6) ICR criterion for the most rapid crystallization occurred in the investigated materials (peak V) is given in Table 1 for 10 K/min heating rate. The obtained ICR is higher than for Se-Te, Ge-Sb-Se or Bi-containing Ge-Sb-Te amorphous layers [51], which makes the investigated glasses R 1 and R 2 promising materials for phase-change memory applications, even if the disadvantage from having several crystallizing phases is taken into account.…”

Section: Resultsmentioning

confidence: 91%

“…One of the important parameters for practical applications of the investigated ChG as, for example, medium for the phase-change memory is the crystallization rapidity. In order to quantify it, an "index of crystallization rapidity" (ICR), which defines crystallization rapidity as a determined ratio between the peak height and width, can be calculated [51]:…”

Section: Resultsmentioning

confidence: 99%

“…Dietzel criterion of glass stability[12] and index of crystallization rapidity ICR[51], calculated for the investigated ChG using DSC curves recorded at 10 K/min heating rate.…”

mentioning

confidence: 99%

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Devitrification of Bi- and Ga-containing germanium-based chalcogenide glasses

Saturday

Johnson

Thai

et al. 2016

Journal of Alloys and Compounds

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Novel Bi x Ga y (GeSe 4 ) 50-(x+y)/2 (GeTe 4 ) 50-(x+y)/2 glasses are proposed as perspective materials, having potential to combine thermo-electric effect, rare earth solubility, different types of conductivity and topological insulating behaviour in one medium. Thermal stability and nonisothermal crystallization kinetics of these materials are studied by differential scanning calorimetry, X-ray diffraction and Raman scattering techniques. Crystallization of at least five different phases is assumed due to the fit of experimental DSC curves. The Dietzel criterion of glass stability is determined and the activation energy for each crystallization process is calculated. The applicability of Johnson-Mehl-Avrami (JMA) equation to describe the crystallization kinetics is verified in these glasses.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

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Devitrification of Bi- and Ga-containing germanium-based chalcogenide glasses

Saturday

Johnson

Thai

et al. 2016

Journal of Alloys and Compounds

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“…Compared wіth pure Ge 2 Sb 2 Te 5 , lower transіtіon temperatures were demonstrated because of Bі dopіng [10]. Іn our prevіous work, we іnvestіgated the effect of the іntroductіon of Bі on the thermal, electrіcal and optіcal propertіes of thіn fіlms of the system of chalcogenіde rocks Ge 8 Sb 2-x Bі x Te 11 , [11,12]. Due to the latest trends іn the study of PCM recordіng usіng ultrashort laser pulses, іn thіs paper we present our results of phase change transіtіon іn new chalcogenіde materіals of the Ge 8 Sb 2-x Bі x Te 11 system usіng іndіvіdual femtosecond laser pulses.…”

Section: іNtroductіonmentioning

confidence: 90%

Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses

Karabyn¹,

Mistrı́k²,

Tveryanovіch³

et al. 2022

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The phase transformatіon amorphous to crystallіne of thіn fіlms Ge8Sb2-xBіxTe11 system (where x = 0; 1; 2) deposіted by the Flash Thermal Evaporatіon (FE). Phase transformatіon were іnduced by ultra-fast (40 fs) femtosecond sіngle laser pulse іrradіatіon, and were compared іn structure, optіcal propertіes and topography. The obtaіned results demonstrate, that sіngle fs pulse laser іrradіatіon appears to be effectіve іn іnducіng crystallіzatіon of Ge8Sb2-xBіxTe11 thіn fіlms and enablіng the attaіnment of a hіgher speed data set/reset. The substіtutіon of bіsmuth for antіmony leads to a change іn optіcal, electrіcal and thermal propertіes dependіng on the Bі concentratіon for the studіed materіals. The hіgh optіcal contrast makes the studіed Ge8Sb2-xBіxTe11 samples promіsіng for PRAM memorіes.

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“…[2] This makes the corresponding amorphous state more stable against crystallization but also increases the optical pulse duration required for crystallization, which indicates a decrease of crystallization-rate. [2,17] Isoelectronic substitution [18][19][20][21][22][23] and stoichiometric modifications [24][25][26] are promising approaches to optimize the materials' properties further. Trends upon substitution could enable the systematic tailoring of a material based on multiple compositional parameters.…”

Section: Introductionmentioning

confidence: 99%

Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn

Zalden

Koch

Paulsen

et al. 2020

Adv Funct Materials

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Thin films of (Ge 1-x Sn x ) 8 Sb 2 Te 11 are prepared to study the impact of Snsubstitution on properties relevant for application in phase-change memory, a next-generation electronic data storage technology. It is expected that substitution decreases the crystallization temperature, but it is not known how the maximum crystallization rate is affected. Ge 8 Sb 2 Te 11 is chosen from the (GeTe) y (Sb 2 Te 3 ) 1-y system of phase-change materials as a starting point due to its higher crystallization temperature as compared to the common material Ge 2 Sb 2 Te 5 . In situ X-ray diffraction at 5 K min −1 heating rate is performed to determine the crystallization temperature and the resulting structure. To measure the maximum crystallization rate, femtosecond optical pulses that heat the material repetitively and monitor the resulting increase of optical reflectance are used. Glasses over the entire composition range are prepared using a melt-quenching process. While at x = 0, 97, subsequent pulses are required for crystallization, one single pulse is enough to achieve the same effect at x = 0.5. The samples are further characterized by optical ellipsometry and calorimetry. The combined electrical and optical contrast and the ability to cycle between states with single femtosecond pulses renders Ge 4 Sn 4 Sb 2 Te 11 promising for photonics applications.

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Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording

Cited by 18 publications

References 50 publications

Devitrification of Bi- and Ga-containing germanium-based chalcogenide glasses

Devitrification of Bi- and Ga-containing germanium-based chalcogenide glasses

Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses

Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn

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