Amorphous to Polycrystalline Phase Transition of In Situ Annealed Ge Films: Structural, Morphological, Optical, and Electrical Characteristics

Abstract

Radio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600 °C. X‐ray diffraction (XRD) and Raman spectroscopy revealed that the Ge films were initially amorphous but transformed to polycrystalline after annealing at 450 °C. Further annealing up to 600 °C resulted in improved crystallinity. Strain studies of the films using XRD and Raman showed compressive (out‐of‐plane) and tensile (in‐plane) strains, respectively, throughout all the annealing temperatures. The surface morphology of the films was recorded using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), which showed grain growth with annealing temperatures. The optical energy gap evaluated from absorption spectra for crystalline films decreased with annealing temperature, indicating improvement in crystallinity of films. The resistivity of the films deduced using current‐voltage measurements was found to decrease with annealing temperature, which can be attributed to enhancement in grain size. This study establishes a correlation between strain, grain size, optical energy gap, and electrical resistivity with temperature for Ge films deposited on glass substrates. Thus, the present study provides insights into variation in physical and electrical properties of films with in situ annealing temperature for their applicability in optoelectronic devices.