Amorphous transparent conductive oxide InGaO<sub>3</sub>(ZnO)<sub>m</sub> (m≤ 4): a Zn4s conductor

Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro; Narushima, Satoru; Hosono, Hideo

doi:10.1080/13642810110045923

Cited by 138 publications

(59 citation statements)

References 20 publications

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“…It was considered that this kind of amorphous oxide could be used to produce semiconducting devices with wider controllability and better stability than existing devices at the time. Along with an additional requirement that a toxic element should not be included, we chose a-IGZO, which was first reported in 2001 [44], to develop the first AOS TFTs, and in 2004 we demonstrated the normally off operation of the a-IGZO TFT [1].…”

Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…[47,48,50] For example, cadmium oxide (CdO) features the largest electron mobility (in the range of 100-200 cm 2 V −1 s −1 ) in the TCO family. [47,51,52] This large mobility is attributed to the octahedral coordination of the oxygen atoms in the rocksalt structure of CdO.…”

Section: Progress Reportmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

364

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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“…Inverse photoelectron and molecular orbital studies show that the density of states of conduction band bottom of amorphous TCOs are almost the same as in the crystalline material [20,34].…”

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confidence: 99%

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

et al. 2011

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Abstract:Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron cosputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. *Manuscript Click here to view linked ReferencesThe samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67 %. The optical, electrical and morphological properties have been thoroughly studied.The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17 % zinc content ratio showed the lowest resistivity (6.6×10 -4 Ωcm) and the highest transmittance (above 80 % in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

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Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor

Cited by 138 publications

References 20 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Transparent Electrodes for Efficient Optoelectronics

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

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Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

Cited by 138 publications

References 20 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Transparent Electrodes for Efficient Optoelectronics

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

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Amorphous transparent conductive oxide InGaO₃(ZnO)_m (m≤ 4): a Zn4s conductor