&#x2018;wet N<inf>2</inf>O oxidation&#x2019; process and interface state density characterization of nanoscale nitrided SiO<inf>2</inf> for flash memory application

Abstract

In this paper we first present the 'wet N 2 O' furnace oxidation process to grow nitrided tunnel oxides in the thickness range 6 to 8 nm on silicon at a temperature of 800°C. Electrical characteristics of MOS capacitors and MOSFETs fabricated using this oxide as gate oxide have been evaluated and the superior features of this oxide are ascertained .The frequency response of the interface states, before and after subjecting the MOSFET gate oxide to constant current stress, is studied using a simple analytical model developed in this work. Index Terms-WetN 2 O oxidation, Nitridation, Interface state density, tunnel oxide, Constant Current Stress (CCS), Flash memory, Frequency response of interface traps.