Amplification in Graphene Nanoribbon Junctions

Pezoldt, Jörg; Hähnlein, Bernd; Jacobs, Heiko O.; Schwierz, Frank

doi:10.4028/www.scientific.net/msf.858.1141

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Gnr Three Terminal Junctions1

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2017

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“…We have fabricated epitaxial graphene Y‐branch and T‐branch TTJs on semi‐insulating SiC substrates, ,] see Figure . A feature specific for our TTJs is that the terminal pads consist of graphene instead of a metal, i.e., the devices are metal‐free.…”

Section: Gnr Three Terminal Junctionsmentioning

confidence: 99%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Section: Gnr Three Terminal Junctionsmentioning

confidence: 99%