Amplification of acoustic waves in piezoelectric semiconductor plates

Yang, Jiashi; Zhou, Honggang

doi:10.1016/j.ijsolstr.2004.10.011

Cited by 67 publications

(21 citation statements)

References 21 publications

(37 reference statements)

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“…An acoustic wave propagating in piezoelectric semiconductors usually stimulates electric fields that bring charge carriers into motion, and conversely, the carrier motion will produce an opposite effect on the electric fields and the acoustic wave itself [1–4]. This kind of interaction between an acoustic wave and carriers in piezoelectric semiconductors is called the acoustoelectric effect, which is a special case of a more general phenomenon, called wave–particle drag [4–5].…”

Section: Introductionmentioning

confidence: 99%

“…This kind of interaction between an acoustic wave and carriers in piezoelectric semiconductors is called the acoustoelectric effect, which is a special case of a more general phenomenon, called wave–particle drag [4–5]. Obviously, acoustoelectric coupling of piezoelectric semiconductors can be used to develop many new microelectronic devices with modern functions, for example piezoelectric field-effect transistors [6–11], piezoelectric charge-coupled devices [12–15], piezoelectric chemical sensors [16–17], and nanogenerators made of vertically aligned ZnO nanowires [18–27].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Liang

Fan

Chen

et al. 2018

Beilstein J. Nanotechnol.

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In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus, carrier drift in a piezoelectric semiconducting structure is essentially nonlinear unless the induced fluctuation of carrier concentration is very small. In this paper, the nonlinear governing equation of carrier concentration was established by coupling both piezoelectric effect and semiconduction. A nonlinear carrier-drift effect on the performance of a ZnO nanogenerator was investigated in detail and it was elucidated that carrier motion/redistribution occurs in the ZnO nanowire (ZNW) cross section while there is no carrier motion in the axial direction. At the same time, we noted that the amplitude of boundary electric charge grows with increasing deformation, but the peaks of boundary electric charge do not appear at the cross-section endpoints. Thus, in order to effectively improve the performance of the ZNW nanogenerator, the effect of electrode configuration on the piezoelectric potential difference and output power was analyzed in detail. The electrode size for the optimal performance of a ZnO nanowire generator was proposed. This analysis that couples electromechanical fields and carrier concentration as a whole has some referential significance to piezotronics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Liang

Fan

Chen

et al. 2018

Beilstein J. Nanotechnol.

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“…This theory has been used to study some of the applications mentioned above: the inclusion problem for composites (Yang et al, 2006), the fracture of piezoelectric semiconductors (Hu et al, 2007;Sladek et al, 2014a;2014b), the electromechanical energy conversion in these materials (Li et al, 2015), the vibrations of plates (Wauer and Suherman, 1997), and to develop low-dimensional theories of piezoelectric semiconductor plates and shells (Yang and Zhou, 2005;. Researchers have also developed more general and fully nonlinear theories (de Lorenzi and Tiersten, 1975;McCarthy and Tiersten, 1978;Maugin and Daher, 1986).…”

Section: Introductionmentioning

confidence: 99%

Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod

Zhang

Yang

2016

JZUS-A

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Abstract:We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.

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“…19 This theory has been used to study some of the applications in the above, the inclusion problem for piezoelectric semiconductor composites, 20 the fracture of piezoelectric semiconducting materials, 21-23 the electromechanical energy conversion in these materials, 24 vibrations of piezoelectric semiconductor plates, 25 and to develop low-dimensional theories of piezoelectric semiconductor plates and shells. 26,27 Researchers have also developed more general and fully nonlinear theories for piezoelectric semiconductors under strong electric fields with large mechanical deformations. [28][29][30] This paper is concerned with the propagation of extensional waves in a thin piezoelectric semiconductor rod which is often used in piezoelectric semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Propagation of extensional waves in a piezoelectric semiconductor rod

et al. 2016

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We studied the propagation of extensional waves in a thin piezoelectric semiconductor rod of ZnO whose c-axis is along the axis of the rod. The macroscopic theory of piezoelectric semiconductors was used which consists of the coupled equations of piezoelectricity and the conservation of charge. The problem is nonlinear because the drift current is the product of the unknown electric field and the unknown carrier density. A perturbation procedure was used which resulted in two one-way coupled linear problems of piezoelectricity and the conservation of charge, respectively. The acoustic wave and the accompanying electric field were obtained from the equations of piezoelectricity. The motion of carriers was then determined from the conservation of charge using a trigonometric series. It was found that while the acoustic wave was approximated by a sinusoidal wave, the motion of carriers deviates from a sinusoidal wave qualitatively because of the contributions of higher harmonics arising from the originally nonlinear terms. The wave crests become higher and sharper while the troughs are shallower and wider. This deviation is more pronounced for acoustic waves with larger amplitudes. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

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Amplification of acoustic waves in piezoelectric semiconductor plates

Cited by 67 publications

References 21 publications

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod

Propagation of extensional waves in a piezoelectric semiconductor rod

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