2017
DOI: 10.1103/physrevb.95.045405
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Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals

Abstract: We identify a possible mechanism of the plasmon instabilities in periodically gated twodimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based on the transfer-matrix formalism, we derive the generic dispersion equation for the travelling plasmons in these stru… Show more

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Cited by 54 publications
(48 citation statements)
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“…[24]. DS-type instabilities were also recently demonstrated in a periodically gated two-dimensional plasmonic crystal under direct current [25].…”
mentioning
confidence: 80%
“…[24]. DS-type instabilities were also recently demonstrated in a periodically gated two-dimensional plasmonic crystal under direct current [25].…”
mentioning
confidence: 80%
“…conditions at the junctions of gated and ungated 2DESs include the ballistic current condition [23] and continuity of the potential [24]. These single-point boundary conditions may also be combined with the conditions for the whole junction; an example is the continuity of the plasmon power flow [24].…”
Section: Introductionmentioning
confidence: 99%
“…This makes it difficult to capture a large fraction of the impinging THz beam for the detection or match the device impedance for the emission. Grating gate device structures [11][12][13] could alleviate this second problem and were recently shown to be suitable for the implementation of the DS instability [14]. However, another problem is how to ensure the same gate-to-channel voltages in the field effect transistor channels connected in series [15].…”
Section: Introductionmentioning
confidence: 99%