Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

“…We have already demonstrated total ionizing dose effect (TID) resistance of 4H-SiC MOSFETs and some reports also showed that the MOSFETs work even after high irradiation doses exceeding 100 Mrad [12][13][14]. The thick embedded oxide film makes SOI devices relatively vulnerable to TID, however, we suggest that TID effects can be reduced by thinning the BOX layer to the same thickness as the gate oxide film.…”

“…These properties mean SiC crystal has a hardness to radiation and has potential for electronic devices with low soft errors. Operation of 4H-SiC bipolar junction transistors (BJTs), junction field effect transistors (JFETs), and metal-oxide-semiconductor transistors (MOSFETs) have been demonstrated in high temperature environments [4][5][6][7][8][9][10][11][12][13][14]. In terms of the image sensor, 4H-SiC has already demonstrated operation as a UV imaging system with 256 pixels at 400°C [15].…”

Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

“…Among them, silicon carbide (SiC), 7) especially 4H-SiC, is attracting attention due to both its excellent physical properties and mature device fabrication technologies. 8) It is now being studied not only as a nextgeneration power device material, [9][10][11][12][13][14][15] but also for applications other than the power devices. [16][17][18][19] Further development of 4H-SiC devices requires the understanding of the properties of 4H-SiC.…”

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

“…[1][2][3][4][5] Especially for applications in harsh environments, SiC-based MOSFETs have been extensively developed by many research groups. [6][7][8][9][10] Although SiC MOSFETs have been introduced commercially there are still critical issues such as low channel mobility, large threshold voltage shift and operational lifetime that need to be overcome. [11][12][13][14][15] The literature has reported that a high density of traps at the SiO 2 /SiC interface accounts for the low channel carrier mobility, whereas a large concentration of traps located in the oxide layer (near-interface states) accounts for the shift of the threshold voltage of the SiC MOSFET.…”