An 0.5 μm BiCMOS technology for low power wireless telecommunications applications

Blair, C.; Luk, Timwah; Darmawan, J.; Bien, Daniel C. S.

doi:10.1109/bipol.1996.554624

Cited by 1 publication

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the burning-in criterion the other acceptable values are those of Cressler (IBM) [4], Schüppen [21], and Greenberg (IBM) [38] for a SiGe HBT. The values of Sung (AT&T) [39] and Blair (National) [40] for a Si BJT are also reasonable. [21], Greenberg [38], Cressler [4], Sung [39] and Blair [40].…”

Section: Transistors With High Bv Ceo and High F Maxmentioning

confidence: 71%

“…The values of Sung (AT&T) [39] and Blair (National) [40] for a Si BJT are also reasonable. [21], Greenberg [38], Cressler [4], Sung [39] and Blair [40]. The data shown by open circles are taken from figure 12 of [37].…”

Section: Transistors With High Bv Ceo and High F Maxmentioning

confidence: 71%

“…Peak f max versus BV CEO for Si BJTs and SiGe HBTs are plotted. The data are taken from Schüppen[21], Greenberg[38], Cressler[4], Sung[39] and Blair[40]. The data shown by open circles are taken from figure12of[37].…”

mentioning

confidence: 99%

See 2 more Smart Citations

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

View full text Add to dashboard Cite

SiGe technology has acquired great importance in recent years. Recent advances made in the SiGe HBT technology for analogue applications are discussed in this two-part review paper. Strain, stability, reliability, mobility of charge carriers, bandgap narrowing and effective density of states of SiGe layers have been discussed in part I. This paper (part II) is devoted to the HBTs: their design and performance. The two designs of the HBTs developed by IBM and by Daimler-Benz are discussed. Their relative merits and constraints imposed by the stability criterion on each design are described. The technology used for implementing the two designs is also described. The dc and ac characteristics and Ge profiles needed to optimize different figures of merit are discussed in detail. The parasitic barriers created by outdiffusion of B and also on operating the HBT at high current densities are explained. High injection barriers can be suppressed by a special design of the Ge profiles. Introduction of C in the base suppresses outdiffusion of B. HBTs with SiGeC base layers are discussed. Issues involved in simultaneous optimization of f T , f max and BV CEO are addressed. Values of f T , f max and BV CEO of high-performance HBTs are compiled and given in a table. The noise characteristics of the SiGe HBTs are far superior to those of III-V devices. Noise in SiGe HBTs is discussed in detail. Finally, a summary of selected circuits that have been fabricated using SiGe HBTs is given.

show abstract